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参数资料
| 型号： | 2SB767Q |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, MINIP3-F1, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 239K |
| 代理商： | 2SB767Q |
SM12(G,J)48,USM12(G,J)48,SM12(G,J)48A,USM12(G,J)48A
2006-10-30
2
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
UNIT
(U)SM12G48
(U)SM12G48A
400
Repetitive Peak
Off-State Voltage
(U)SM12J48
(U)SM12J48A
VDRM
600
V
R.M.S On-State Current
IT (RMS)
12
A
120 (50Hz)
Peak One Cycle Surge On-State
Current (Non-Repetitive)
ITSM
132 (60Hz)
A
I
2
t Limit Value
I
2
t
72
A
2
s
Critical Rate of Rise of
On-State Current
(Note 1)
di /dt
50
A /
s
Peak Gate Power Dissipation
PGM
5
W
Average Gate Power Dissipation
PG (AV)
0.5
W
Peak Forward Gate Voltage
VGM
10
V
Peak Forward Gate Current
IGM
2
A
Junction Temperature
Tj
40~125
°C
Storage Temperature Range
Tstg
40~125
°C
Note 1 : VDRM=0.5×Rated
ITM≤15A
tgw≥10s
tgr≤250ns
igp=IGT×2.0
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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