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参数资料
| 型号： | 2SB767Q |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, MINIP3-F1, 3 PIN |
| 文件页数： | 3/3页 |
| 文件大小： | 239K |
| 代理商： | 2SB767Q |
SM12(G,J)48,USM12(G,J)48,SM12(G,J)48A,USM12(G,J)48A
2006-10-30
3
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Repetitive Peak Off-State Current
IDRM
VDRM=Rated
―
20
A
I
T2 (
+) , Gate (+)
―
1.5
II
T2 (
+) , Gate ()
―
1.5
III
T2 (
) , Gate ()
―
1.5
Gate Trigger Voltage
IV
VGT
VD=12V
RL=20
T2 (
) , Gate (+)
―
V
I
T2 (
+) , Gate (+)
―
30
II
T2 (
+) , Gate ()
―
30
III
T2 (
) , Gate ()
―
30
SM12G48
SM12J48
IV
T2 (
) , Gate (+)
―
I
T2 (
+) , Gate (+)
―
20
II
T2 (
+) , Gate ()
―
20
III
T2 (
) , Gate ()
―
20
Gate Trigger
Current
SM12G48A
SM12J48A
IV
IGT
VD=12V
RL=20
T2 (
) , Gate (+)
―
mA
Peak On-State Voltage
VTM
ITM=17A
―
1.5
V
Gate Non-Trigger Voltage
VGD
VD=Rated, Tc=125°C
0.2
―
V
Holding Current
IH
VD=12V, ITM=1A
―
50
mA
Thermal Resistance
Rth (j-c)
Junction to Case, AC
―
2.4
°C / W
(U)SM12G48
(U)SM12J48
―
300
―
Critical Rate of Rise of
Off-State Voltage
(U)SM12G48A
(U)SM12J48A
dv / dt
VDRM=Rated, Tj=125°C
Exponential Rise
―
200
―
V /
s
(U)SM12G48
(U)SM12J48
10
―
Critical Rate of Rise of
Off-State Voltage at
Commutation
(U)SM12G48A
(U)SM12J48A
(dv / dt) c
VDRM=400V, Tj=125°C
(di / dt) c=6.5A / ms
4
―
V /
s
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