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参数资料
| 型号： | 2SB768K |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252 |
| 封装： | MP-3Z, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 531K |
| 代理商： | 2SB768K |
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SILICON POWER TRANSISTOR
2SB768
PNP SILICON TRIPLE DIFFUSED TRANSISTOR
DATA SHEET
Document No. D18264EJ4V0DS00 (4th edition)
(Previous No. TC-1625A)
Date Published July 2006 NS CP(K)
Printed in Japan
1985, 2006
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The 2SB768 is designed for Color TV Vertical Deflection Output,
especially in Hybrid Integrated Circuits.
FEATURES
High Voltage: VCEO =
150 V
Complement to 2SD1033
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Collector to Base Voltage
VCBO
200
V
Collector to Emitter Voltage
VCEO
150
V
Emitter to Base Voltage
VEBO
5
V
Collector Current (DC)
IC(DC)
2
A
Collector Current (pulse)
Note 1
IC(pulse)
3
A
Total Power Dissipation (TA = 25
°C) Note 2
PT
2.0
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
55 to +150
°C
Notes 1. PW
≤ 10 ms, Duty Cycle ≤ 50%
2. When mounted on ceramic substrate of 7.5 cm
2 × 0.7 mm
PACKAGE DRAWING (Unit: mm)
12 3
4
6.5 ±0.2
4.4 ±0.2
5.0 ±0.2
0.5 ±0.1
5.6
±0.3
9.5
±0.5
2.5
±0.5
1.0
±0.5
1.5
0.1
+0.2
2.3 ±0.2
0.5 ±0.1
Note
0.4
MIN.
0.5
TYP.
0.15 ±0.15
2.3 ±0.3
5.5
±0.2
TO-252 (MP-3Z)
1. Base
2. Collector
3. Emitter
4. Collector Fin
Note The depth of notch at the top of the fin is
from 0 to 0.2 mm.
<R>
相关PDF资料 |
PDF描述 |
|---|---|
| 2SB772-O-BP | 3 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SB772-GR-BP | 3 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SB772-Y-BP | 3 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SB772-R-BP | 3 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SB772Q | Si, SMALL SIGNAL TRANSISTOR, TO-126 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB768-K-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB768L | 制造商:NEC 制造商全称:NEC 功能描述:BJT |
| 2SB768M | 制造商:NEC 制造商全称:NEC 功能描述:BJT |
| 2SB77 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:GERMANIUM PNP ALLOYED JUNCTION (LOW SPEED SWITCHING AUDIO FREQUENCY POWER OUTPUT) |
| 2SB772 | 功能描述:两极晶体管 - BJT PNP Medium Power -30VCEO -5VBEO RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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