Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SB776 : PNP Epitaxial Planar Silicon Transistor
2SD896 : NPN Triple Diffused Planar Silicon Transistor
100V/7A, AF 40W Output Applications
Ordering number:ENN678F
2SB776/2SD896
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
90503TN (KT)/91098HA (KT)/90595MO (KOT)/4017KI/1115MW, TS 8-341G/7089 No.678–1/4
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
Cs
g
n
i
t
a
Rt
i
n
U
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
o
t
c
e
ll
o
CV
O
B
C
0
2
1
)
–
(V
e
g
a
t
l
o
V
r
e
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
CV
O
E
C
0
1
)
–
(V
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
e
t
i
m
EV
O
B
E
6
)
–
(V
t
n
e
r
u
C
r
o
t
c
e
ll
o
CIC
7
)
–
(A
)
e
s
l
u
P
(
t
n
e
r
u
C
r
o
t
c
e
ll
o
CI P
C
1
)
–
(A
n
o
i
t
a
p
i
s
i
D
r
o
t
c
e
ll
o
CPC
0
7W
e
r
u
t
a
r
e
p
m
e
T
n
o
i
t
c
n
u
Jj
T
0
5
1
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
Sg
t
s
T
0
5
1
+
o
t
5
–
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2022A
[2SB776/2SD896]
Features
Capable of being mounted easily because of one-
point fixing type plastic molded package
(Interchangeable with TO-3).
Wide ASO because of on-chip ballast resistance.
Goode dependence of fT on current and excellent
high frequency responce.
The descriptions in parentheses are for the 2SB776 only ;
other descriptions than those in parentheses are common
to the 2SB776 and 2SD896.
C
Electrical Characteristics at Ta = 25C
1 : Base
2 : Collector
3 ; Emitter
SANYO : TO-3PB
Tc=25C
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
C
s
g
n
i
t
a
R
t
i
n
U
n
i
mp
y
tx
a
m
t
n
e
r
u
C
f
o
t
u
C
r
o
t
c
e
ll
o
CI
O
B
C
V B
C
I
,
V
0
8
)
–
(
=
E 0
=1
.
0
)
–
(A
m
t
n
e
r
u
C
f
o
t
u
C
r
e
t
i
m
EI
O
B
E
V B
E
I
,
V
4
)
–
(
=
C 0
=1
.
0
)
–
(A
m
n
i
a
G
t
n
e
r
u
C
D
h E
F 1V E
C
I
,
V
5
)
–
(
=
C
A
1
)
–
(
=*
0
6*
0
2
h E
F 2V E
C
I
,
V
5
)
–
(
=
C
A
4
)
–
(
=0
2
t
c
u
d
o
r
P
h
t
d
i
w
d
n
a
B
-
n
i
a
GfT
V E
C
I
,
V
5
)
–
(
=
C
A
1
)
–
(
=5
1z
H
M
e
c
n
a
t
i
c
a
p
a
C
t
u
p
t
u
OC b
o
V B
C
z
H
M
1
=
f
,
V
0
1
)
–
(
=
)
0
2
(F
p
0
4
1F
p
e
g
a
t
l
o
V
r
e
t
i
m
E
-
o
t
-
e
s
a
BV E
B
V E
C
I
,
V
5
)
–
(
=
C
A
1
)
–
(
=5
.
1
)
–
(V
* : The 2SB776/2SD896 are classified by 1A hFE as follows :
Continued on next page.
k
n
a
RD
E
h E
F
0
2
1
o
t
0
60
0
2
o
t
0
1
15.6
2.6
3.5
1.2
14.0
1.6
1.0
2.0
0.6
20.0
15.0
1.3
3.2
4.8
2.0
0.6
5.45
1.4
1
2
3