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参数资料
| 型号： | 2SB929APQ |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封装： | N-TYPE PACKAGE-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 50K |
| 代理商： | 2SB929APQ |
1
Power Transistors
2SB929, 2SB929A
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD1252 and 2SD1252A
s Features
q
High forward current transfer ratio hFE which has satisfactory linearity
q
Low collector to emitter saturation voltage VCE(sat)
q
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–60
–80
–60
–80
–5
–3
35
1.3
150
–55 to +150
Unit
V
A
W
C
2SB929
2SB929A
2SB929
2SB929A
TC=25°C
Ta=25
°C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICES
ICEO
IEBO
VCEO
hFE1
*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
Conditions
VCE = –60V, VBE = 0
VCE = –80V, VBE = 0
VCE = –30V, IB = 0
VCE = –60V, IB = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
VCE = –4V, IC = –1A
VCE = –4V, IC = –3A
IC = –3A, IB = – 0.375A
VCE = –10V, IC = – 0.5A, f = 10MHz
IC = –1A, IB1 = – 0.1A, IB2 = 0.1A
min
–60
–80
70
10
typ
30
0.5
1.2
0.3
max
–200
–300
–1
250
–1.8
–1.2
Unit
A
mA
V
MHz
s
2SB929
2SB929A
2SB929
2SB929A
2SB929
2SB929A
Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the
rank classification.
*h
FE1 Rank classification
Rank
Q
P
hFE1
70 to 150
120 to 250
Unit: mm
1:Base
2:Collector
3:Emitter
N Type Package
8.5
±0.2
6.0
±0.5
10.0
±0.3
10.5min.
2.0
1.5
±0.1
1.5max.
0.8
±0.1
5.08
±0.5
2.54
±0.3
1.1max.
0.5max.
1.0
±0.1
3.4
±0.3
2
13
Unit: mm
8.5
±0.2
4.4
±0.5
2.0
10.0
±0.3
14.7
±0.5
4.4
±0.5
6.0
±0.3
3.4
±0.3
2.54
±0.3
5.08
±0.5
1.0
±0.1
0.8
±0.1
1.5
+0
–0.4
3.0
+0.4
–0.2
0 to 0.4
1.1 max.
R0.5
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB929AQ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-262VAR |
| 2SB929AR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-221VAR |
| 2SB929P | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-262VAR |
| 2SB929PQ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-262VAR |
| 2SB929-PQ | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
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