参数资料
型号: 2SB936Q
厂商: PANASONIC CORP
元件分类: 功率晶体管
英文描述: 10 A, 20 V, PNP, Si, POWER TRANSISTOR
封装: ROHS COMPLIANT, N-G1, 3 PIN
文件页数: 2/4页
文件大小: 253K
代理商: 2SB936Q
2SB0936, 2SB0936A
2
SJD00017BED
VBE(sat) IC
hFE IC
fT IC
PC Ta
IC VCE
VCE(sat) IC
0
160
40
120
80
0
10
20
30
40
50
(1)TC=Ta
(2)With a 50
×50×2mm
Al heat sink
(3)Without heat sink
(PC=1.3W)
(1)
(3)
(2)
Collector
power
dissipation
P
C
(W)
Ambient temperature T
a (°C)
0
12
2
10
4
8
6
12
10
8
6
4
2
TC=25C
–80mA
–60mA
–50mA
–40mA
–35mA
–20mA
–15mA
–30mA
–25mA
–10mA
–5mA
IB=–100mA
Collector
current
I
C
(A)
Collector-emitter voltage V
CE (V)
0.01
0.1
1
10
0.1
1
10
IC/IB=30
TC=100C
–25C
25C
Collector-emitter
saturation
voltage
V
CE(sat)
(V)
Collector current I
C (A)
0.01
0.1
1
10
1
0.1
10
IC/IB=30
TC=–25C
25C
100C
Base-emitter
saturation
voltage
V
BE(sat)
(V)
Collector current I
C (A)
0.1
1
10
100
1
10
Forward
current
transfer
ratio
h
FE
Collector current I
C (A)
102
104
103
VCE=–2V
TC=100C
25C
–25C
–0.01
–0.1
–1
–10
1
10
Transition
frequency
f
T
(MHz)
Collector current I
C (A)
102
104
103
VCE=–10V
f=10MHz
TC=25C
0.1
1
10
100
1
10
102
103
104
Collector
output
capacitance
(Common
base,
input
open
circuited)
C
ob
(pF)
Collector-base voltage V
CB (V)
IE=0
f=1MHz
TC=25C
Cob VCB
ton, tstg, tf IC
Safe operation area
0.01
10
1
0.1
0
8
2
6
4
tstg
ton
tf
Pulsed tw=1ms
Duty cycle=1%
IC/IB=30
(–IB1=IB2)
VCC=–20V
TC=25C
Turn-on
time
t
on
,
Storage
time
t
stg
,
Fall
time
t
f
(
s)
Collector current I
C (A)
Collector
current
I
C
(A)
Collector-emitter voltage V
CE (V)
0.01
0.1
1
10
100
1
10
100
Non repetitive pulse
TC=25C
t=10ms
t=1ms
ICP
IC
t=300ms
2SB0936A
2SB0936
This product complies with the RoHS Directive (EU 2002/95/EC).
相关PDF资料
PDF描述
2SB0936P 10 A, 20 V, PNP, Si, POWER TRANSISTOR
2SB0936Q 10 A, 20 V, PNP, Si, POWER TRANSISTOR
2SB0936AP 10 A, 40 V, PNP, Si, POWER TRANSISTOR
2SB936P 10 A, 20 V, PNP, Si, POWER TRANSISTOR
2SB949R 2 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
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