参数资料
型号: 2SC1165
英文描述: SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
中文描述: 晶体管|晶体管|叩| 500mA的一(c)| TO - 39封装
文件页数: 2/5页
文件大小: 24K
代理商: 2SC1165
2SC1162
2
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
35
V
I
C
= 1 mA, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
35
V
I
C
= 10 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
5
V
I
E
= 1 mA, I
C
= 0
Collector cutoff current
I
CBO
h
FE
*
h
FE
20
μ
A
V
CB
= 35 V, I
E
= 0
V
CE
= 2 V, I
C
= 0.5 A
V
= 2 V, I
C
= 1.5 A
(pulse test)
DC current transfer ratio
1
60
320
20
Base to emitter voltage
V
BE
0.93
1.5
V
V
= 2 V, I
C
= 1.5 A
(pulse test)
Collector to emitter saturation
voltage
V
CE(sat)
0.5
1.0
V
I
= 2 A, I
B
= 0.2 A (pulse
test)
Gain bandwidth product
Note:
1. The 2SC1162 is grouped by h
FE
as follows.
f
T
180
MHz
V
CE
= 2 V, I
C
= 0.2 A
B
C
D
60 to 120
100 to 200
160 to 320
0.8
0.6
0.4
0.2
0
50
100
150
200
Ambient temperature Ta (
°
C)
C
C
Maximum Collector Dissipation Curve
0.75
2
0.5
0.1
5
20
50
Collector to emitter voltage V
CE
(V)
C
C
Area of Safe Operation
5
1.0
0.2
1
2
10
I
C(max)
(DC Operation)
T
C
= 25
°
C
P
C
=10W
相关PDF资料
PDF描述
2SC1195 TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 2.5A I(C) | TO-3
2SC1198K SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
2SC1199 TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 300MA I(C) | TO-39
2SC1212 Silicon NPN Epitaxial
2SC1212A Silicon NPN Epitaxial
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