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参数资料
| 型号： | 2SC1317S |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | ROHS COMPLIANT, TO-92-B1, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 531K |
| 代理商： | 2SC1317S |
Transistors
Publication date : October 2008
SJC00100DED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC1317
Silicon NPN epitaxial planar type
For low-frequency power amplication and driver amplication
Complementary to 2SA0719
Features
Low collector-emitter saturation voltage VCE(sat)
Complementary pair with 2SA0719
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
25
V
Emitter-base voltage (Collector open)
VEBO
7
V
Collector current
IC
0.5
A
Peak collector current
ICP
1
A
Collector power dissipation
PC
625
mW
Junction temperature
Tj
150
°
C
Storage temperature
Tstg
–55 to +150
°
C
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 10 mA, IE = 0
30
V
Collector-emitter voltage (Base open)
VCEO
IC = 10 mA, IB = 0
25
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 mA, IC = 0
7
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 0
0.1
m
A
Forward current transfer ratio
hFE1 *
VCE = 10 V, IC = 150 mA
85
340
hFE2
VCE = 10 V, IC = 500 mA
40
Collector-emitter saturation voltage
VCE(sat) IC = 300 mA, IB = 30 mA
0.35
0.60
V
Base-emitter saturation voltage
VBE(sat) IC = 300 mA, IB = 30 mA
1.1
1.5
V
Transition frequency
fT
VCB = 10 V, IE = –50 mA, f = 200 MHz
200
MHz
Collector output capacitance
(Common base, input open circuited)
Cre
VCB = 10 V, IE = 0, f = 1 MHz
6
15
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classication
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
Package
Code
TO-92B-B1
Pin Name
1. Emitter
2. Collector
3. Base
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
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| 2SC1318 | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:NPN Plastic Encapsulated Transistor |
| 2SC13180RA | 功能描述:TRANS NPN 50VCEO 500MA TO-92 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SC1318A | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC1318AQ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 500MA I(C) | TO-226AA |
| 2SC1318AR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 500MA I(C) | TO-226AA |
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