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参数资料
| 型号： | 2SC1317S |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | ROHS COMPLIANT, TO-92-B1, 3 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 531K |
| 代理商： | 2SC1317S |
2N6661DCSM
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both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
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DOC 8874, ISSUE 1
STATIC ELECTRICAL RATINGS (Each Side - T
case=25°C unless otherwise stated)
Parameter
Test Conditions
Min. Typ.
Max.
Unit
V(BR)DSS
Drain – Source Breakdown Voltage
VGS = 0V
ID = 1.0A
90
-
VDS = VGS
ID = 1.0mA
0.8
-
2
TC = 125°C
0.3
-
VGS(th)
Gate – Source threshold Voltage
TC = -55°C
-
2.5
V
VGS = ±20V
VDS = 0V
-
±100
IGSS
Gate – Source Leakage Current
TC = 125°C
-
±500
nA
VDS = 72V
VGS = 0V
-
1.0
IDSS
Zero Gate Voltage Drain Current
TC = 125°C
-
100
A
ID(on)
On – State Drain Current (note 3)
VDS = 15V
VGS = 10V
1.5
-
A
VGS = 5V
ID = 0.3A
-
5.3
VGS = 10V
ID = 1.0A
-
4
RDS(on)
Drain – Source On Resistance
(note 3)
TC = 125°C
-
7.5
VGS = 5V
ID = 0.3A
-
1.6
VGS = 10V
ID = 1.0A
-
4
VDS(on)
Drain – Source On Voltage (note 3)
TC = 125°C
-
7.5
V
gFS
Forward Transconductance (Note 3)
VDS = 7.5V
ID = 0.475A
170
-
ms
VSD
Diode Forward Voltage (Note 3)
VGS = 0V
Is = 0.86A
0.7
-
1.4
V
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
-
50
-
Coss
Output Capacitance
-
40
-
Crss
Reverse Transfer Capacitance
VDS = 25V
f = 1.0MHz
VGS = 0V
-
10
-
pF
Td(on)
Turn-On Delay
-
10
-
Td(off)
Turn-Off Delay Time
VDD = 25V
RGS = 50
ID = 1A
(Note 3)
-
10
-
ns
MATCHING CHARACTERISTICS FET1 to FET2
VGS(th) M
Gate – Source threshold Voltage
Matching
VDS = VGS
ID = 1mA
-
±25
mV
gFSM
Forward Transconductance Matching
(Note 3)
VDS = 7.5V
ID = 0.475A
-
50
ms
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC1318 | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:NPN Plastic Encapsulated Transistor |
| 2SC13180RA | 功能描述:TRANS NPN 50VCEO 500MA TO-92 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SC1318A | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC1318AQ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 500MA I(C) | TO-226AA |
| 2SC1318AR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 500MA I(C) | TO-226AA |
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