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参数资料
| 型号： | 2SC1775 |
| 文件页数： | 2/7页 |
| 文件大小： | 34K |
| 代理商： | 2SC1775 |
2SC1775, 2SC1775A
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SC1775
2SC1775A
Unit
Collector to base voltage
V
CBO
90
120
V
Collector to emitter voltage
V
CEO
90
120
V
Emitter to base voltage
V
EBO
55V
Collector current
I
C
50
mA
Collector power dissipation
P
C
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
–50 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SC1775
2SC1775A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to emitter
breakdown voltage
V
(BR)CEO
90
—
120
—
V
I
C = 1 mA, RBE = ∞
Collector cutoff current
I
CBO
—
0.5
—
AV
CB = 75 V, IE = 0
——
—
0.5
AV
CB = 100 V, IE = 0
DC current transfer ratio h
FE1*
1
400
—
1200 400
—
1200
V
CE = 12 V, IC = 2 mA
h
FE2
160
—
160
—
V
CE = 12 V,
I
C = 0.1 mA
Base to emitter voltage
V
BE
—
0.75
—
0.75
V
CE = 12 V, IC = 2 mA
Collector to emitter
saturation voltage
V
CE(sat)
—
0.5
—
0.5
V
I
C = 10 mA, IB = 1 mA
Gain bandwidth product f
T
—
200
—
200
—
MHz
V
CE = 12 V, IC = 2 mA
Collector output
capacitance
Cob
—
1.6
—
1.6
—
pF
V
CB = 25 V, IE = 0,
f = 1 MHz
Noise figure
NF
—
5.0
—
5.0
dB
V
CE = 6 V,
I
C = 50 A,
R
g = 50 k
f = 10
Hz
—
1.5
—
1.5
dB
f = 1
kHz
Note:
1. The 2SC1775/A is grouped by h
FE1 as follows.
EF
400 to 800
600 to 1200
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PDF描述 |
|---|---|
| 2SC1775A | |
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| 2SC2209 | Silicon NPN epitaxial planar type |
| 2SC2209R | 1.5 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-126 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC1775A | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial |
| 2SC1775AE | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92 |
| 2SC1775AETZ | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC1775AF | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 509MA I(C) | TO-92 |
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