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参数资料
| 型号： | 2SC2062STPC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SPT, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 70K |
| 代理商： | 2SC2062STPC |
2SC2062S
Transistors
Rev.A
1/2
High-gain Amplifier Transistor (32V, 0.3A)
2SC2062S
Features
1) Darlington connection for a high hFE.
(DC current gain = 5000 (Min.) at VCE = 3V, IC = 0.1A.)
2) High input impedance.
Absolute maximum ratings (Ta=25
°C)
E
C
B
C
B
E
: Emitter
: Collector
: Base
External dimensions (Unit : mm)
Taping specifications
SPT
0.45
2.5
(1) (2) (3)
(15Min.)
5.0
3.0
3Min.
0.45
0.5
4.0
2.0
(1)Emitter
(2)Collector
(3)Base
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
VCBO
VCES
VEBO
IC
PC
Tj
Tstg
Limits
40
32
12
0.3
150
55 to +150
Unit
V
A
W
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCES
BVEBO
ICBO
IEBO
fT
Cob
40
32
12
200
2.5
0.1
V
A
MHz
pF
IC
=100A
IC
=10mA
IE
=100A
VCB
=30V
VEB
=12V
VCE(sat)
1.4
V
IC/IB
=200mA/0.2mA
hFE
10000
VCE/IC
=3V/0.1A
VCE
=5V , IE= 10mA , f=100MHz
VCB
=10V , IE=0A , f=1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Output capacitance
Collector-emitter saturation voltage
Transition frequency of the device.
Packaging specifications and hFE
Type
2SC2062S
SPT
C
TP
5000
Package
hFE
Code
Basic ordering unit (pieces)
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