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参数资料
| 型号： | 2SC2290 |
| 元件分类： | 功率晶体管 |
| 英文描述： | HF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 2-13B1A, 4 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 169K |
| 代理商： | 2SC2290 |
2SC2290
2001-01-31 1/3
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2290
2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS
(LOW SUPPLY VOLTAGE USE)
Specified 12.5V, 28MHz Characteristics
Output Power
: Po = 60WPEP (Min.)
Power Gain
: Gp = 11.8dB (Min.)
Collector Efficiency
: ηC = 35% (Min.)
Intermodulation Distortion: IMD = 30dB (Max.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
45
V
Collector-Emitter Voltage
VCES
45
V
Collector-Emitter Voltage
VCEO
18
V
Emitter-Base Voltage
VEBO
4
V
Collector Current
IC
20
A
Collector Power Dissipation
PC
175
W
Junction Temperature
Tj
175
°C
Storage Temperature Range
Tstg
65~175
°C
JEDEC
—
EIAJ
—
TOSHIBA
213B1A
Weight: 5.2g
Unit in mm
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
The information contained herein is subject to change without notice.
000707EAA1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC2290A | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR - Bulk |
| 2SC2290A_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:SILICON NPN EPITAXIAL PLANAR TYPE |
| 2SC2292 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 500V 8A 80W BEC |
| 2SC2293 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 500V 10A 100W BEC |
| 2SC2295 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer type |
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