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参数资料
| 型号： | 2SC2290 |
| 元件分类： | 功率晶体管 |
| 英文描述： | HF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 2-13B1A, 4 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 169K |
| 代理商： | 2SC2290 |
2SC2290
2001-01-31 2/3
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Emitter Breakdown Voltage
V (BR) CEO
IC = 100mA, IB = 0
18
—
V
Collector-Emitter Breakdown Voltage
V (BR) CES
IC = 100mA, VEB = 0
45
—
V
Emitter-Base Breakdown Voltage
V (BR) EBO
IE = 1mA, IC = 0
4
—
V
DC Current Gain
hFE
VCE = 5V, IC = 10A *
10
—
150
—
Collector Output Capacitance
Cob
VCB = 12.5V, IE = 0
f = 1MHz
—
500
pF
Power Gain
Gp
11.8
13.8
—
dB
Input Power
Pi
—
2.5
4
WPEP
Collector Efficiency
ηC
35
—
%
Intermodulation Distortion
IMD
VCC = 12.5V, f1 = 28.000MHz,
f2 = 28.001MHz
Iidle = 50mA
Po = 60WPEP (Fig.)
—
30
dB
Series Equivalent Input Impedance
Zin
—
1.02
j0.17
—
Series Equivalent Output Impedance
Zout
VCC = 12.5V, f1 = 28.000MHz,
f2 = 28.001MHz
Po = 60WPEP
—
0.86
j0.21
—
* Pulse Test:
Pulse Width ≤ 100s, Duty Cycle ≤ 3%
CAUTION
Beryllia Ceramics is used in this product. The dust or vapor can be dangerous to humans. Do not break, cut, crush
or dissolve chemically. Dispose of this product properly according to law. Do not intermingle with normal industrial
or domestic waste.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC2290A | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR - Bulk |
| 2SC2290A_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:SILICON NPN EPITAXIAL PLANAR TYPE |
| 2SC2292 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 500V 8A 80W BEC |
| 2SC2293 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 500V 10A 100W BEC |
| 2SC2295 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer type |
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