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参数资料
| 型号： | 2SC2148 |
| 厂商： | NEC Corp. |
| 英文描述： | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
| 中文描述： | 微波低噪声放大器NPN硅外延晶体管 |
| 文件页数： | 3/8页 |
| 文件大小： | 52K |
| 代理商： | 2SC2148 |
2SC2148, 2SC2149
3
2SC2148
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T(T
A
= 48
°
C)
P
T(Tc = 150
°
C)
T
j
Tstg
30
14
3.0
50
250
250
200
V
V
V
mA
mW
mW
°
C
°
C
65 to +150
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
0.1
μ
A
V
CB
= 15 V, I
E
= 0
Emitter Cutoff Current
I
EBO
0.1
μ
A
V
EB
= 2.0 V, I
C
= 0
DC Current Gain
h
FE
30
80
200
V
CE
= 10 V, I
C
= 10 mA
Gain Bandwidth Product
f
T
3.0
GHz
V
CE
= 10 V, I
C
= 10 mA
Output Capacitance
*
C
ob
0.55
pF
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Insertion Gain
S
21e
2
7.5
9.3
dB
V
CE
= 10 V, I
C
= 10 mA, f = 1.0 GHz
Noise Figure
NF
2.1
3.5
dB
V
CE
= 10 V, I
C
= 3.0 mA, f = 500 MHz
Maximum Available Gain
MAG
13.3
dB
V
CE
= 10 V, I
C
= 10 mA, f = 1.0 GHz
*
The emitter terminal should be connected to the guard terminal of the three-terminal capacitance bridge.
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
200
100
50
20
10
0.5
1
5
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 10 V
I
C
Collector Current
mA
h
F
D
10
50
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
10
5
1
0.5
0.5
0.6
0.7
0.8
0.9
V
BE
Base to Emitter Voltage
V
V
CE
= 10 V
I
C
C
m
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC2149 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
| 2SC2150 | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 2SC2181 | TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 10A I(C) | SOT-123VAR |
| 2SC2194A | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-202 |
| 2SC2790A | TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 2A I(C) | TO-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC2149 | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:SILICON TRANSISTR |
| 2SC2150 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 11V V(BR)CEO | 30MA I(C) | SOT-173 |
| 2SC2151 | 制造商:SAVANTIC 制造商全称:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| 2SC2166 | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:Silicon NPN Transistor Final RF Power Output |
| 2SC2167 | 制造商:SAVANTIC 制造商全称:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
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