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参数资料
| 型号： | 2SC2290A |
| 元件分类： | 功率晶体管 |
| 英文描述： | HF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 2-13B1A, 4 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 176K |
| 代理商： | 2SC2290A |
2SC2290A
2007-11-01
1
TOSHIBA Transistor Silicon Npn Epitaxial Planar Type
2SC2290A
2~30MHz SSB Linear Power Amplifier Applications
(Low Supply Voltage Use)
Specified 12.5V, 28MHz Characteristics
Output Power
: Po = 60WPEP (Min.)
Power Gain
: Gp = 11.8dB (Min.)
Collector Efficiency
: ηC = 35% (Min.)
Intermodulation Distortion: IMD = 30dB (Max.)
Absolute Maximum Ratings (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
45
V
Collector-Emitter Voltage
VCES
45
V
Collector-Emitter Voltage
VCEO
18
V
Emitter-Base Voltage
VEBO
4
V
Collector Current
IC
20
A
Collector Power Dissipation
PC
175
W
Junction Temperature
Tj
175
°C
Storage Temperature Range
Tstg
65~175
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Dot
Lot No.
JEDEC
—
EIAJ
—
TOSHIBA
213B1A
Weight: 5.2g
Unit in mm
2SC2290
TOSHIBA
JAPAN
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PDF描述 |
|---|---|
| 2SC2295C | 30 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SC2310-B | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC2310C | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC2310B | SMALL SIGNAL TRANSISTOR, TO-92 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC2290A_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:SILICON NPN EPITAXIAL PLANAR TYPE |
| 2SC2292 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 500V 8A 80W BEC |
| 2SC2293 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 500V 10A 100W BEC |
| 2SC2295 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer type |
| 2SC22950BL | 功能描述:TRANS NPN 20VCEO 30MA MINI-3 RoHS:是 类别:分离式半导体产品 >> RF 晶体管 (BJT) 系列:- 产品变化通告:Product Discontinuation 17/Dec/2010 标准包装:1 系列:- 晶体管类型:NPN 电压 - 集电极发射极击穿（最大）:4.7V 频率 - 转换:47GHz 噪声系数（dB典型值@频率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 时的最小直流电流增益 (hFE):160 @ 25mA，3V 电流 - 集电极 (Ic)（最大）:45mA 安装类型:表面贴装 封装/外壳:4-SMD，扁平引线 供应商设备封装:4-TSFP 包装:Digi-Reel® 其它名称:BFP 740FESD E6327DKR |
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