参数资料
型号: 2SC2383R
元件分类: 小信号晶体管
英文描述: 1000 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封装: LEAD FREE, TO-92MOD, 2-5J1A, 3 PIN
文件页数: 3/5页
文件大小: 135K
代理商: 2SC2383R
2SC2383
2006-11-09
3
Colle
ctor-emi
tter
sa
tura
tion
vol
tage
V
CE
(sat)
(V)
Collector-emitter voltage VCE (V)
IC – VCE
Colle
ct
or
curr
ent
I C
(A
)
Collector current IC (mA)
hFE – IC
DC
curre
nt
gain
h
FE
Collector current IC (mA)
VCE (sat) – IC
Collector current IC (mA)
Base-emitter voltage VBE (V)
IC – VBE
Colle
ct
or
curr
ent
I C
(A
)
Collector current IC (mA)
hFE – IC
DC
curre
nt
gain
h
FE
Colle
ctor-emi
tter
sa
tura
tion
vol
tage
V
CE
(sat)
(V)
VCE (sat) – IC
30
10
100
300
500
100
10
30
50
1000
300
Common emitter
Ta = 25°C
VCE = 2 V
5
10
1.0
0
0.6
0.4
0.2
0.4
0.6
Common emitter
IC/IB = 10
Ta = 100°C
0.8
0
25
1.0
1.2
1.4
0.8
10
5
30
100
300
0.5
0.1
0.01
0.03
0.05
1000
0.3
Common emitter
IC/IB = 10
Ta = 100°C
25
0
30
10
100
300
500
100
10
30
50
1000
300
Common emitter
VCE = 10 V
VCE = 5 V
Ta = 100°C
25
0
1.0
0
0.6
0.4
0.2
4
8
12
Common emitter
Ta = 25°C
10
6
IB = 0.5 mA
15
16
4
3
2.5
20
24
28
0.8
2
1.5
1
0
10
5
30
100
300
0.5
0.1
0.01
0.03
0.05
1000
0.3
Common emitter
Ta = 25°C
IC/IB = 10
5
相关PDF资料
PDF描述
2SC2383-R 1000 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SC2383-Y 1000 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SC2383Y-BP 1000 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SC2383R-BP 1000 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SC2383O-BP 1000 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
相关代理商/技术参数
参数描述
2SC2383-R 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:NPN Silicon Plastic-Encapsulate Transistor
2SC2383Y 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1A I(C) | TO-92VAR
2SC2383-Y 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:NPN Silicon Plastic-Encapsulate Transistor
2SC2383-Y(F) 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 160V 1A 3-Pin TO-92 Mod
2SC2383-Y(T6DNS,FM 功能描述:TRANS NPN 1A 160V TO226-3 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:NPN 电流 - 集电极(Ic)(最大值):1A 电压 - 集射极击穿(最大值):160V 不同?Ib,Ic 时的?Vce 饱和值(最大值):1.5V @ 50mA,500mA 电流 - 集电极截止(最大值):1μA(ICBO) 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):60 @ 200mA,5V 功率 - 最大值:900mW 频率 - 跃迁:100MHz 工作温度:150°C(TJ) 安装类型:通孔 封装/外壳:TO-226-3,TO-92-3 长体 供应商器件封装:TO-92MOD 标准包装:1