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参数资料
| 型号： | 2SC2462LBTL-E |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SC-59A, MPAK-3 |
| 文件页数： | 2/7页 |
| 文件大小： | 173K |
| 代理商： | 2SC2462LBTL-E |
2SC2462
Rev.2.00 Aug 10, 2005 page 2 of 6
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
50
—
V
IC = 10
A, IE = 0
Collector to emitter breakdown voltage
V(BR)CEO
40
—
V
IC = 1 mA, RBE =
∞
Emitter to base breakdown voltage
V(BR)EBO
5
—
V
IE = 10
A, IC = 0
Collector cutoff current
ICBO
—
0.5
A
VCB = 30 V, IE = 0
Emitter cutoff current
IEBO
—
0.5
A
VEB = 2 V, IC = 0
DC current transfer ratio
hFE*
1
100
—
500
VCE = 12 V, IC = 2 mA
Collector to emitter saturation voltage
VCE(sat)
—
0.2
V
IC = 10 mA, IB = 1 mA
Base to emitter voltage
VBE
—
0.75
V
VCE = 12 V, IC = 2 mA
Note:
1. The 2SC2462 is grouped by hFE as follows.
Grade
B
C
D
Mark
LB
LC
LD
hFE
100 to 200
160 to 320
250 to 500
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC2463DFUL | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2463DF01 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2463DEUR | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2463DDUL | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2463DDTL | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC2462-LC(TL-E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SC2462LCTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC2462LDTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC2463 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANS. SC-5955V .1A .15W ECB SURFACE MOUNT |
| 2SC2463D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 100MA I(C) | SOT-23 |
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