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参数资料
| 型号： | 2SC2462LBTL-E |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SC-59A, MPAK-3 |
| 文件页数： | 3/7页 |
| 文件大小： | 173K |
| 代理商： | 2SC2462LBTL-E |
2SC2462
Rev.2.00 Aug 10, 2005 page 3 of 6
Main Characteristics
150
100
50
Ambient Temperature Ta (°C)
0
150
50
100
Maximum Collector Dissipation Curve
Collector
Power
Dissipation
P
C
(mW)
Collector to Emitter Voltage VCE (V)
0
Collector
Current
I
C
(mA)
Typical Output Characteristics
10
8
6
4
2
25
20
15
10
5
IB = 0
10
A
20
30
40
50
60
P
C =
200
mW
Typical Transfer Characteristics
Collector
Current
I
C
(mA)
1
0
2
3
4
5
Base to Emitter Voltage VBE (V)
1.0
0.8
0.6
0.4
0.2
VCE = 12 V
DC Current Transfer Ratio vs.
Collector Current
Collector Current IC (mA)
0.03
0.1
30
0.3
3
1.0
10
0
100
200
300
DC
Current
Transfer
Ratio
h
FE
VCE = 12 V
25
Ta =
75°
C
Small Signal Current Transfer Ratio vs.
Collector Current
Collector Current IC (mA)
Small
Signal
Current
Transfer
Ratio
h
fe
0.03
0.1
30
0.3
3
1.0
10
0
100
200
300
f = 270 Hz
VCE = 12 V
Base to Emitter Voltage vs.
Ambient Temperature
Ambient Temperature Ta (°C)
–20
0
80
20
60
40
0.4
0.5
0.6
0.8
0.7
0.9
Base
to
Emitter
Voltage
V
BE
(V)
VCE = 12 V
IC = 2 mA
相关PDF资料 |
PDF描述 |
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| 2SC2463DFUL | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2463DF01 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2463DEUR | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2463DDUL | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2463DDTL | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC2462-LC(TL-E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SC2462LCTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC2462LDTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC2463 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANS. SC-5955V .1A .15W ECB SURFACE MOUNT |
| 2SC2463D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 100MA I(C) | SOT-23 |
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