参数资料
型号: 2SC2480
厂商: PANASONIC CORP
元件分类: 小信号晶体管
英文描述: Silicon NPN epitaxial planer type(For high-frequency amplification / oscillation / mixing)
中文描述: VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236
封装: ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN
文件页数: 3/4页
文件大小: 253K
代理商: 2SC2480
2SC2480
3
SJC00116CED
Zrb IE
GP IE
NF
I
E
bib gib
brb grb
bfb gfb
bob gob
0.1
1
10
Reverse
transfer
impedance
Z
rb
(
)
0
120
100
80
60
40
20
VCB
= 10 V
f
= 2 MHz
Ta
= 25°C
Emitter current I
E (mA)
0.1
1
10
100
Power
gain
G
P
(dB)
0
40
35
30
25
20
15
10
5
VCB
= 10 V
f
= 100 MHz
Rg
= 50
Ta
= 25°C
Emitter current I
E (mA)
Noise
figure
NF
(dB)
0
12
10
8
6
4
2
0.1
1
10
100
VCB
= 10 V
f
= 100 MHz
Rg
= 50 k
Ta
= 25°C
Emitter current I
E (mA)
60
050
40
30
20
10
0
10
20
30
40
50
Input conductance g
ib (mS)
Input
susceptance
b
ib
(mS)
yib
= g
ib
+ jb
ib
VCB
= 10 V
f
= 900 MHz
IE
= 2 mA
5 mA
300
500
600
200
2.4
1.0
0
0.2
0.4
0.6
0.8
0
0.4
0.8
1.2
1.6
2.0
f
= 900 MHz
IE
= 5 mA
2 mA
300
500
600
200
Reverse transfer conductance g
rb (mS)
Reverse
transfer
susceptance
b
rb
(mS)
yrb
= g
rb
+ jb
rb
VCB
= 10 V
0
60
40
20
0
20
40
48
40
32
24
16
8
2 mA
300
500
600
900
f
= 200 MHz
IE
= 5 mA
Forward transfer conductance g
fb (mS)
Forward
transfer
susceptance
b
fb
(mS)
yfb
= g
fb
+ jb
fb
VCB
= 10 V
0
2.0
1.6
1.2
0.8
0.4
12
10
8
6
4
2
5 mA
300
500
600
900
f
= 200 MHz
IE
= 2 mA
Output conductance g
ob (mS)
Output
susceptance
b
ob
(mS)
yob
= g
ob
+ jb
ob
VCE
= 10 V
This product complies with the RoHS Directive (EU 2002/95/EC).
相关PDF资料
PDF描述
2SC2631 Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
2SC2632 Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
2SC2634 Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)
2SC2636 Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation)
2SC2647 Silicon NPN epitaxial planer type(For high-frequency amplification)
相关代理商/技术参数
参数描述
2SC248000L 功能描述:TRANS NPN HF AMP 20VCEO MINI 3P RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)(最大):1A 电压 - 集电极发射极击穿(最大):30V Ib、Ic条件下的Vce饱和度(最大):200mV @ 100mA,1A 电流 - 集电极截止(最大):100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR
2SC2480S 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 50MA I(C) | TO-236
2SC2480T 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 50MA I(C) | TO-236
2SC2480-T-TX 制造商:Panasonic Industrial Company 功能描述:
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