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参数资料
| 型号： | 2SC2547 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | TO-92(1), 3 PIN |
| 文件页数： | 6/10页 |
| 文件大小： | 55K |
| 代理商： | 2SC2547 |
2SC2545, 2SC2546, 2SC2547
3
Electrical Characteristics (Ta = 25°C)
2SC2545
2SC2546
2SC2547
Item
Symbol Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
60
—
90
—
120
—
V
I
C = 10 A, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
60
—
90
—
120
—
V
I
C = 1 mA,
R
BE =
Emitter to base
breakdown voltage
V
(BR)EBO
5—
—
5
—
5—
—
V
I
E = 10 A, IC = 0
Collector cutoff current
I
CBO
—
0.1
—
0.1
—
0.1
A
V
CB = 50 V, IE = 0
Emitter cutoff current
I
EBO
—
0.1
—
0.1
—
0.1
A
V
EB = 2 V, IC = 0
DC current transfer ratio
h
FE*
1
250
—
1200 250
—
1200
250
—
800
V
CE = 12 V,
I
C = 2 mA
Collector to emitter
saturation voltage
V
CE(sat)
—
0.2
—
0.2
—
0.2
V
I
C = 10 mA,
I
B = 1 mA
Base to emitter voltage
V
BE
—
0.6
—
0.6
—
0.6
—
V
CE = 12 V,
I
C = 2 mA
Gain bandwidth product f
T
—90
—
—90
—
—90
—
MHz V
CE = 12 V,
I
C = 2 mA
Collector output
capacitance
Cob
—
3.0
—
3.0
—
3.0
—
pF
V
CB = 10 V, IE = 0,
f = 1 MHz
Noise voltage referred
input
e
n
—
0.5
—
0.5
—
0.5
—
nV/
√Hz
V
CE = 6V,
I
C = 10 mA,
f = 1 kHz,
R
g = 0, f = 1Hz
Note:
1. The 2SC2545, 2SC2546 and 2SC2547 are grouped by h
FE as follows.
DE
F
2SC2545, 2SC2546
250 to 500
400 to 800
600 to 1200
2SC2547
250 to 500
400 to 800
—
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC2547D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SC2547-D | 制造商:Renesas Electronics 功能描述:NPN 制造商:Renesas Electronics 功能描述:NPN Bulk |
| 2SC2547E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SC2547ETZ-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC2548 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 30MA I(C) | TO-92 |
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