- 您现在的位置：买卖IC网 > PDF目录106918 > 2SC2632 (PANASONIC CORP) Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification) PDF资料下载
参数资料
| 型号： | 2SC2632 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification) |
| 中文描述： | 50 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | ROHS COMPLIANT, SC-51, TO-92L-A1, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 225K |
| 代理商： | 2SC2632 |
Data Sheet D16538EJ2V0DS
2
2SK3716
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V
10
A
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 30 A
22
43
S
Drain to Source On-state Resistance
Note
RDS(on)1
VGS = 10 V, ID = 30 A
5.2
6.5
m
RDS(on)2
VGS = 4.5 V, ID = 30 A
6.6
9.1
m
Input Capacitance
Ciss
VDS = 10 V
2700
pF
Output Capacitance
Coss
VGS = 0 V
770
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
290
pF
Turn-on Delay Time
td(on)
VDD = 20 V, ID = 30 A
11
ns
Rise Time
tr
VGS = 10 V
13
ns
Turn-off Delay Time
td(off)
RG = 0
69
ns
Fall Time
tf
14
ns
Total Gate Charge
QG
VDD = 32 V
50
nC
Gate to Source Charge
QGS
VGS = 10 V
9
nC
Gate to Drain Charge
QGD
ID = 60 A
13
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 60 A, VGS = 0 V
0.94
1.5
V
Reverse Recovery Time
trr
IF = 60 A, VGS = 0 V
40
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s
42
nC
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
50
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
≤ 1%
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC2634 | Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) |
| 2SC2636 | Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation) |
| 2SC2647 | Silicon NPN epitaxial planer type(For high-frequency amplification) |
| 2SB66BL60V | SINGLE COLOR DISPLAY CLUSTER, BLUE |
| 2SB200CAG6K-28V | SINGLE COLOR LED, SUPER GREEN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC26320R | 功能描述:TRANS NPN 150VCEO 50MA TO-92L RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SC2632R | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC2632-S | 制造商:MATSUSHITA 功能描述: 制造商:Panasonic Electric Works 功能描述: |
| 2SC2636 | 制造商:Distributed By MCM 功能描述:SUB ONLY MATS. TRANS. M-TYPE 30V .05A .4W BCE |
| 2SC2647 | 制造商:Distributed By MCM 功能描述:SUB ONLY MATS. TRANS. M-TYPE 30V .03A .25W BCE |
发布紧急采购，3分钟左右您将得到回复。