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参数资料
| 型号： | 2SC2712L-G-AL3-R |
| 厂商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE PACKAGE-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 201K |
| 代理商： | 2SC2712L-G-AL3-R |
2SC2712
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R206-029.E
ABSOLUTE MAXIMUM RATINGS (Ta=25°С, unless otherwise stated)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
150
mA
Base Current
IB
30
mA
Collector Power Dissipation
PC
150
mW
Junction Temperature
TJ
+125
°С
Storage Temperature
TSTG
-55 ~ +125
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise stated)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector Cut-off Current
ICBO
VCB=60V, IE=0
0.1
μA
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
0.1
μA
DC Current Gain
hFE
VCE=6V, IC=2mA
70
700
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=100mA, IB=10mA
0.1
0.25
V
Transistor Frequency
fT
VCE=10V, IC=1mA
80
MHz
Collector Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
2.0
3.5
pF
Noise Figure
NF
VCE=6V, IC=0.1mA
f=1kHz, Rg=10K
1.0
10
dB
CLASSIFICATION OF hFE
RANK
Y
G
L
RANGE
120~240
200~400
350~700
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC2712-OTE85LF | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR NPN S-MINI 制造商:Toshiba America Electronic Components 功能描述:Transistors Bipolar - BJT NPN 0.15A IC 50V Gen Purp Trans |
| 2SC2712S-GR,LF | 功能描述:两极晶体管 - BJT SM Sig PNP Trans VCEO -50V IC -150mA RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC2712S-Y,LF | 功能描述:两极晶体管 - BJT SM Sig PNP Trans VCEO -50V IC -150mA RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC2712S-Y,LF(D | 制造商:Toshiba America Electronic Components 功能描述:TRANS NPN 50V 150MA S-MINI 制造商:Toshiba 功能描述:SMALL-SIGNAL TRANSISTOR |
| 2SC2712Y | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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