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参数资料
| 型号： | 2SC2712Y |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 451K |
| 代理商： | 2SC2712Y |
2SC2712
NPN
Plastic-Encapsulate
Transistors
Features
Complementary to 2SA1162
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
50
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current
150
mA
PC
Collector power dissipation
150
mW
TJ
Junction Temperature
-55 to +150
℃
TSTG
Storage Temperature
-55 to +150
℃
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
OFF CHARACTERISTICS
ICBO
Collector Cutoff Current
(VCB=60Vdc,IE=0)
---
0.1
A
IEBO
Emitter Cutoff Current
(VEB=5.0Vdc, IC=0)
---
0.1
A
ON CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown
Voltage
(IC=1mA, IB=0)
50
---
V
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100
A, IE=0)
60
---
V
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100
A, IC=0)
5.0
---
V
hF
DC Current Gain*
(IC=2mAdc, VCE=6.0Vdc)
70
---
700
---
VCE(sat)
Collector Saturation Voltage*
(IC=-100mAdc, IB=10mAdc)
---
0.1
0.25
V
Cob
Output Capacitance
(VCB=10V, IE=0, f=1MHz)
---
2.0
3.5
pF
fT
Gain Bandwidth product
(VCE=10Vdc, IC=1mAdc)
80
---
MHz
NF
Noise Figure
VCE=6V, IC=0.1mA, f=1KHz, Rg=10K
Ω)
---
1.0
10
dB
CLASSIFICATION OF hFE
Rank
O
Y
GR
BL
Range
70-140
120-240
200-400
350-700
Marking
LO
LY
LG
LL
omponents
20736 Marilla Street Chatsworth
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MCC
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
A
B
C
D
E
F
G
H
J
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
K
Revision: 2
2006/05/10
TM
Micro Commercial Components
E
B
C
www.mccsemi.com
1 of 3
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
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| 2SC2713BLTE85R | 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC2712-Y | 功能描述:两极晶体管 - BJT INCORRECT MOUSER P/N RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC2712-Y(T5L,F,T) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 50V 0.15A 3-Pin S-Mini T/R 制造商:Toshiba America Electronic Components 功能描述:X34 PB SMALL SIGNAL TRANSISTOR - Tape and Reel |
| 2SC2712-Y(T5L,T) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 50V 0.15A 3-Pin S-Mini T/R |
| 2SC2712-Y(TE85L) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 50V 0.15A 3-Pin S-Mini T/R |
| 2SC2712-Y(TE85L,F) | 功能描述:两极晶体管 - BJT 150mA 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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