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参数资料
| 型号： | 2SC2713-BL |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封装： | 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 646K |
| 代理商： | 2SC2713-BL |
2SC2713
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2713
Audio Frequency General Purpose Amplifier Applications
High voltage: VCEO = 120 V
Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
High hFE: hFE = 200~700
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SA1163
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
120
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Base current
IB
20
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 120 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
DC current gain
hFE
(Note)
VCE = 6 V, IC = 2 mA
200
700
Collector-emitter saturation voltage
VCE (sat)
IC = 10 mA, IB = 1 mA
0.3
V
Transition frequency
fT
VCE = 6 V, IC = 1 mA
100
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
3.0
pF
Noise figure
NF
VCE = 6 V, IC = 0.1 mA
f
= 1 kHz, RG = 10 kΩ
1.0
10
dB
Note: hFE classification GR (G): 200~400, BL (L): 350~700
Marking
Unit: mm
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC2713-BL(T5LSUMF | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC2713-BL(TE85L) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC2713-BL(TE85L,F | 制造商:Toshiba 功能描述:NPN |
| 2SC2713-BL(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:Transistor |
| 2SC2713-BL,LF | 功能描述:TRANS NPN 120V 0.1A S-MINI 制造商:toshiba semiconductor and storage 系列:- 包装:剪切带（CT） 零件状态:有效 晶体管类型:NPN 电流 - 集电极（Ic）（最大值）:100mA 电压 - 集射极击穿（最大值）:120V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:300mV @ 1mA，10mA 电流 - 集电极截止（最大值）:100nA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:350 @ 2mA，6V 功率 - 最大值:150mW 频率 - 跃迁:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商器件封装:TO-236 标准包装:1 |
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