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参数资料
| 型号： | 2SC2714-R |
| 元件分类： | 小信号晶体管 |
| 英文描述： | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 5/8页 |
| 文件大小： | 474K |
| 代理商： | 2SC2714-R |
2SJ551(L),2SJ551(S)
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
–60
—
V
I
D = –10mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±20
——V
I
G = ±100A, VDS = 0
Zero gate voltege drain current
I
DSS
—
–10
AV
DS = –60 V, VGS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
—
–2.0
V
I
D = –1mA, VDS = –10V
Static drain to source on state
R
DS(on)
—
0.050
0.065
I
D = –9A, VGS = –10V
Note4
resistance
R
DS(on)
—
0.070
0.110
I
D = –9A, VGS = –4V
Note4
Forward transfer admittance
|y
fs|
1016—
S
I
D = –9A, VDS = -10V
Note4
Input capacitance
Ciss
—
1300
—
pF
V
DS = –10V
Output capacitance
Coss
—
650
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
180
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
14
—
ns
V
GS = –10V, ID = –9A
Rise time
t
r
—
95
—
ns
R
L =3.33
Turn-off delay time
t
d(off)
—
190
—
ns
Fall time
t
f
—
135
—
ns
Body–drain diode forward voltage
V
DF
—
–1.0
—
V
I
F = –18A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
70
—
ns
I
F = –18A, VGS = 0
diF/ dt =50A/
s
Note:
4. Pulse test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC2714-Y(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR NPN S-MINI 制造商:Toshiba America Electronic Components 功能描述:Transistors Bipolar - BJT Radio-Freq Bipolar NPN 20mA 100mW 30V |
| 2SC2715 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANS. SC-5935V .05A .15W ECB SURFACE MT |
| 2SC2715-O(TE85L,F) | 制造商:Toshiba 功能描述:NPN |
| 2SC2716 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANS. SC-5935V .1A .15W ECB SURFACE MOUNT |
| 2SC2716-Y(TE85L,F) | 制造商:Toshiba 功能描述:NPN |
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