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参数资料
| 型号： | 2SC2954 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | POWER, MINIMOLD PACKAGE-4 |
| 文件页数： | 1/6页 |
| 文件大小： | 92K |
| 代理商： | 2SC2954 |
DATA SHEET
SILICON TRANSISTOR
2SC2954
NPN SILICON EPITAXIAL TRANSISTOR
POWER MINI MOLD
DATA SHEET
Document No. P10405EJ3V0DS00 (3rd edition)
(Previous No. TC-1458A)
Date Published March 1997 N
Printed in Japan
1994
DESCRIPTION
The 2SC2954 is an NPN epitaxial silicon transistor disigned for
low noise wide band amplifier and buffer amplifier of OSC, for VHF
and CATV bnad.
FEATURES
Low Noise and High Gain.
f = 200 MHz, 500 MHz
NF: 2.3 dB, 2.4 dB
S21e: 20 dB, 12.5 dB
Large PT in Small Package.
PT: 2 W with 16 cm
2
0.7 mm Ceramic Substrate.
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Collector to Base Voltage
VCBO
35
V
Collector to Emitter Voltage
VCEO
18
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
150
mA
Total Power Dissipation
PT*
2.0
W
Termal Resistance
Rth(j-a)*
62.5
C/W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
65 to +150
C
* With 16 cm
2
0.7 mm
Ceramic Substrate
PACKAGE DIMENSIONS
(Unit: mm)
Term, Connection
E
C
B
(SOT-89)
: Emitter
: Collector (Fin)
: Base
0.41
0.03
+0.05
0.47
±0.06
0.42±0.06
4.5±0.1
1.6±0.2
3.0
EB
C
1.5
0.8
MIN.
2.5±0.1
4.0±0.25
1.5±0.1
0.42
±0.06
相关PDF资料 |
PDF描述 |
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| 2SC2979-E | 3 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SC2979 | 3 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SC2982D | 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2982 | 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC2958-K-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC2958-L-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC2959 | 制造商:Distributed By MCM 功能描述:SUB ONLY NEC TRANSISTOR SP-8 160V .5A 1W ECB |
| 2SC2959K | 制造商:Renesas Electronics 功能描述:NPN 制造商:Renesas Electronics 功能描述:NPN Bulk |
| 2SC2959-K-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
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