- 您现在的位置：买卖IC网 > PDF目录33367 > 2SC3130R (PANASONIC CORP) Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236 PDF资料下载
参数资料
| 型号： | 2SC3130R |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236 |
| 封装： | SC-59, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 46K |
| 代理商： | 2SC3130R |
1
Transistor
2SC3130
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation/mixing
s Features
q
High transition frequency fT.
q
Small collector output capacitance Cob and common base reverse
transfer capacitance Crb.
q
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
JEDEC:TO–236
2:Emitter
EIAJ:SC–59
3:Collector
Mini Type Package
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65
±0.15
0.65
±0.15
3
1
2
0.95
1.9
±0.2
0.4
+0.1
–0.05
1.1
+0.2
–0.1
0.8
0.4
±0.2
0
to
0.1
0.16
+0.1
–0.06
1.45
0.1 to 0.3
2.9
+0.2
–0.05
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
15
10
3
50
150
–55 ~ +150
Unit
V
mA
mW
C
s Electrical Characteristics (Ta=25C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Base time constant
Common emitter reverse transfer capacitance
hFE ratio
Symbol
ICBO
VCEO
VEBO
hFE
*
VCE(sat)
fT
Cob
rbb' CC
Crb
h
FE
Conditions
VCB = 10V, IE = 0
IC = 2mA, IB = 0
IE = 10A, IC = 0
VCE = 4V, IC = 5mA
IC = 20mA, IB = 4mA
VCB = 4V, IE = –5mA, f = 200MHz
VCB = 4V, IE = 0, f = 1MHz
VCB = 4V, IE = –5mA, f = 31.9MHz
VCB = 4V, IE = 0, f = 1MHz
VCE = 4V, IC = 100A
VCE = 4V, IC = 5mA
min
10
3
75
1.4
0.75
typ
200
1.9
1.4
11
0.45
max
1
400
0.5
2.5
1.6
Unit
A
V
GHz
pF
ps
pF
Marking symbol :
1S
*h
FE Rank classification
Rank
P
Q
R
hFE
75 ~ 130
110 ~ 220
200 ~ 400
Marking Symbol
1SP
1SQ
1SR
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC3133 | 6 A, 25 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SC3138OTE85R | 50 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SC3138YTE85R | 50 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SC3143-3 | 80 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SA1257-5 | 80 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3133 | 制造商:ASI 制造商全称:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| 2SC3134 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SC-5960V .15A .2W ECB SUFACE MT |
| 2SC3134-4 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23 |
| 2SC3134-5 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23 |
| 2SC3134-6 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23 |
发布紧急采购，3分钟左右您将得到回复。