参数资料
型号: 2SC3314B
厂商: PANASONIC CORP
元件分类: 小信号晶体管
英文描述: 30 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: NS-B1, 3 PIN
文件页数: 2/4页
文件大小: 211K
代理商: 2SC3314B
2SC3314
2
SJC00130BED
VCE(sat) IC
hFE IC
fT IE
PC Ta
IC VCE
IC VBE
Zrb IE
Cre VCE
GP IE
0
160
40
120
80
0
500
400
300
200
100
Collector
power
dissipation
P
C
(mW
)
Ambient temperature T
a (°C)
012
10
8
26
4
0
240
200
160
120
80
40
Ta
= 25°C
80
A
60
A
40
A
20
A
IB
= 100 A
Collector
current
I
C
(mA
)
Collector-emitter voltage V
CE (V)
02.0
1.6
0.4
1.2
0.8
0
60
50
40
30
20
10
VCE
= 10 V
Ta
= 75°C
25°C
25
°C
Base-emitter voltage V
BE (V)
Collector
current
I
C
(mA
)
0.1
1
10
100
0.01
0.1
1
10
100
IC / IB
= 10
Ta
= 75°C
25
°C
25°C
Collector-emitter
saturation
voltage
V
CE(sat)
(V
)
Collector current I
C (mA)
0.1
1
10
100
0
240
200
160
120
80
40
VCE
= 10 V
Ta
= 75°C
25
°C
25°C
Forward
current
transfer
ratio
h
FE
Collector current I
C (mA)
0.1
1
10
100
0
800
600
200
400
Ta
= 25°C
VCB
= 10 V
6 V
Transition
frequency
f
T
(MHz
)
Emitter current I
E (mA)
0.1
1
10
0
60
50
40
30
20
10
VCB
= 10 V
f
= 2 MHz
Ta
= 25°C
Reverse
transfer
impedance
Z
rb
(
)
Emitter current I
E (mA)
0.1
1
10
100
0
3.0
2.5
2.0
1.5
1.0
0.5
f
= 10.7 MHz
Ta
= 25°C
IC
= 3 mA
1 mA
Collector-emitter voltage V
CE (V)
Reverse
transfer
capacitance
C
re
(pF)
(Common
emitter)
0.1
1
10
100
0
24
20
16
12
8
4
VCB
= 10 V
f
= 100 MHz
Ta
= 25°C
Power
gain
G
P
(dB
)
Emitter current I
E (mA)
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