参数资料
型号: 2SC3315C
厂商: PANASONIC CORP
元件分类: 小信号晶体管
英文描述: VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: NS-B1, 3 PIN
文件页数: 1/4页
文件大小: 209K
代理商: 2SC3315C
1
Transistors
Publication date: March 2003
SJC00131BED
2SC3315
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features
Optimum for high-density mounting
Allowing supply with the radial taping
Optimum for RF amplification of FM/AM radios
High transition frequency f
T
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
3V
Collector current
IC
15
mA
Collector power dissipation
PC
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC
= 10 A, I
E
= 030
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 03
V
Base-emitter voltage
VBE
VCB = 6 V, IE = 1 mA
720
mV
Forward current transfer ratio *
hFE
VCB
= 6 V, I
E
= 1 mA
65
260
Transition frequency
fT
VCB = 6 V, IE = 1 mA, f = 200 MHz
450
650
MHz
Reverse transfer capacitance
Cre
VCB = 6 V, IE = 1 mA, f = 10.7 MHz
0.8
1.0
pF
(Common emitter)
Power gain
GP
VCB = 6 V, IE = 1 mA, f = 100 MHz
20
24
dB
Noise figure
NF
VCB
= 6 V, I
E
= 1 mA, f = 100 MHz
3.3
5.0
dB
Unit: mm
■ Electrical Characteristics T
a
= 25°C ± 3°C
Rank
C
D
hFE
65 to 160
100 to 260
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
4.0±0.2
0.75 max.
2.0±0.2
0.45
(2.5) (2.5)
0.7±0.1
23
1
+0.20
–0.10
0.45
+0.20
–0.10
7.6
3.0
±
0.2
(0.8)
15.6
±
0.5
1: Emitter
2: Collector
3: Base
NS-B1 Package
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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