型号: | 2SC3324-GR |
元件分类: | 小信号晶体管 |
英文描述: | 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
封装: | 2-3F1A, SC-59, TO-236MOD, 3 PIN |
文件页数: | 1/5页 |
文件大小: | 149K |
代理商: | 2SC3324-GR |
相关PDF资料 |
PDF描述 |
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2SC3324-BL | 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
2SC3324 | 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
2SC3324TE85R | 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
2SC3324GRTE85L | 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
2SC3325-O | 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
相关代理商/技术参数 |
参数描述 |
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2SC3324-GR(TE85L,F | 制造商:Toshiba America Electronic Components 功能描述:AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS - Tape and Reel 制造商:Toshiba 功能描述:NPN |
2SC3324GRTE85LF | 功能描述:两极晶体管 - BJT Audio Freq Low Audio Freq Low RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
2SC3325 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications |
2SC3325_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications |
2SC3325O | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |