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参数资料
| 型号： | 2SC3320-T3P-T |
| 厂商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 15 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 99K |
| 代理商： | 2SC3320-T3P-T |
2SC3320
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R214-008,B
ABSOLUTE MAXIMUM RATINGS (TC = 25 )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector Base Voltage
VCBO
500
V
VCEO
400
V
Collector Emitter Voltage
VCEO(SUS)
400
V
Emitter Base Voltage
VEBO
7
V
Collector Current
IC
15
A
Base Current
IB
5
A
Power Dissipation
PD
80
W
Junction Temperature
TJ
+150
Storage Temperature
TSTG
-40 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Thermal Resistance Junction to Case
θJC
1.55
℃
/W
ELECTRICAL SPECIFICATIONS (TC =25 , Unless Otherwise Specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector Base Voltage
VCBO
ICBO=1mA
500
V
VCEO
ICEO=10mA
400
V
Collector Emitter Voltage
VCEO(SUS) IC=0.2A
400
V
Emitter Base Voltage
VEBO
IEBO=1mA
7
V
Collector Emitter Saturation Voltage
VCE (SAT)
1
V
Base Emitter Saturation Voltage
VBE (SAT)
IC=6A, IB=1.2A
1.5
V
Collector Cut-off Current
ICBO
VCBO=500V
1
mA
Emitter Cut-off Current
IEBO
VEBO=7V
1
mA
DC Current Gain
hFE
IC=6A, VCE=5V
10
tON
0.5
s
tSTG
1.5
s
Switching Time
tF
IC=7.5A, IB1 =1.5A, IB2=-3A
RL=20, Pw=20s, Duty ≤ 2%
0.15
s
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