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参数资料
| 型号： | 2SC3332 |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 700 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | NP, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 46K |
| 代理商： | 2SC3332 |
83002TN (KT)/71598HA (KT)/3207KI/N257KI/3135KI/O183KI, TS No.1334-1/4
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching Applications
Ordering number:ENN1334D
2SA1319/2SC3332
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
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( ) : 2SA1319
Specifications
Absolute Maximum Ratings at Ta = 25C
Electrical Characteristics at Ta = 25C
Package Dimensions
unit:mm
2003B
[2SA1319/2SC3332]
Features
Hgih breakdown voltage.
Excellent hFE linearity.
Wide ASO and highly resistant to breakdown.
Adoption of MBIT process.
Switching Test Circuit
* : The 2SA1319/2SC3332 are classified by 100mA hFE as follows :
Continued on next page.
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1 : Emitter
2 : Collector
3 : Base
SANYO : NP
PW=20
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≤1%
INPUT
100V
50
RB
333
IB1
IB2
100
F
470
F
--5V
20IB1=--20IB2=IC=300mA
VR
+
RL
(For PNP, the polarity is reversed.)
OUTPUT
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3332_11 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:High-Voltage Switching Applications |
| 2SC3332R | 功能描述:两极晶体管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC3332R-AA | 功能描述:两极晶体管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC3332S | 功能描述:两极晶体管 - BJT BIP NPN 0.7A 160V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC3332S-AA | 功能描述:两极晶体管 - BJT BIP NPN 0.7A 160V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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