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参数资料
| 型号： | 2SC3356-T1S |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | MINIMOLD PACKAGE-3 |
| 文件页数： | 2/6页 |
| 文件大小： | 83K |
| 代理商： | 2SC3356-T1S |
Data Sheet PU10209EJ01V0DS
2
2SC3356
ELECTRICAL CHARACTERISTICS (TA = +25
°°°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 10 V, IE = 0 mA
–
1.0
A
Emitter Cut-off Current
IEBO
VEB = 1.0 V, IC = 0 mA
–
1.0
A
DC Current Gain
hFE
Note 1
VCE = 10 V, IC = 20 mA
50
120
250
–
RF Characteristics
Gain Bandwidth Product
fT
VCE = 10 V, IC = 20 mA
–
7
–
GHz
Insertion Power Gain
S21e2 VCE = 10 V, IC = 20 mA, f = 1 GHz
–
11.5
–
dB
Noise Figure
NF
VCE = 10 V, IC = 7 mA, f = 1 GHz
–
1.1
2.0
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 10 V, IE = 0 mA, f = 1 MHz
0.55
1.0
pF
Notes 1. Pulse measurement: PW
≤ 350
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
R23/Q
Note
R24/R
Note
R25/S
Note
Marking
R23
R24
R25
hFE Value
50 to 100
80 to 160
125 to 250
Note Old Specification/New Specification
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC3356-R | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3356-T1R25-A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3356-T1 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3356-R23 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3356-R25-A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3356-T2B | 制造商:NEC Electronics Corporation 功能描述: 制造商:NEC Electronics Corporation 功能描述:UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3356W | 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:Silicon Epitaxial Planar Transistor |
| 2SC3356-X-AE3-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER |
| 2SC3357 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD |
| 2SC3357(NE85634) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Discrete |
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