参数资料
型号: 2SC3357-T1RH
元件分类: 小信号晶体管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: POWER, MINIMOLD PACKAGE-3
文件页数: 5/10页
文件大小: 211K
代理商: 2SC3357-T1RH
Data Sheet PU10211EJ01V0DS
2
2SC3357
THERMAL RESISTANCE
Parameter
Symbol
Value
Unit
Junction to Ambient Resistance
Rth (j-a)
Note
62.5
°C/W
Note Mounted on 16 cm
2
× 0.7 mm (t) ceramic substrate
ELECTRICAL CHARACTERISTICS (TA = +25
°°°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 10 V, IE = 0 mA
1.0
A
Emitter Cut-off Current
IEBO
VEB = 1.0 V, IC = 0 mA
1.0
A
DC Current Gain
hFE
Note 1
VCE = 10 V, IC = 20 mA
50
120
250
RF Characteristics
Gain Bandwidth Product
fT
VCE = 10 V, IC = 20 mA
6.5
GHz
Insertion Power Gain
S21e2 VCE = 10 V, IC = 20 mA, f = 1 GHz
9.0
dB
Noise Figure (1)
NF
VCE = 10 V, IC = 7 mA, f = 1 GHz
1.1
dB
Noise Figure (2)
NF
VCE = 10 V, IC = 40 mA, f = 1 GHz
1.8
3.0
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 10 V, IE = 0 mA, f = 1 MHz
0.65
1.0
pF
Notes 1. Pulse measurement: PW
≤ 350
s, Duty Cycle ≤ 2%
2. The emitter terminal and the case shall be connected to the guard terminal of the three-terminal
capacitance bridge.
hFE CLASSIFICATION
Rank
RH
RF
RE
Marking
RH
RF
RE
hFE Value
50 to 100
80 to 160
125 to 250
相关PDF资料
PDF描述
2SC3357RH UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC3357-T1RH UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC3357-T1RE UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC3357-T1RH UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC3357-RH UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
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