- 您现在的位置：买卖IC网 > PDF目录30535 > 2SC3413 SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SC3413 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR |
| 封装： | SPAK-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 23K |
| 代理商： | 2SC3413 |
2SC3413
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
40
V
Collector to emitter voltage
V
CEO
30
V
Emitter to base voltage
V
EBO
5V
Collector current
I
C
100
mA
Collector power dissipation
P
C
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
40
——V
I
C = 10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
30
——V
I
C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
5
——V
I
E = 10 A, IC = 0
Collector cutoff current
I
CBO
—
0.5
AV
CB = 18 V, IE = 0
Emitter cutoff current
I
EBO
—
0.5
AV
EB = 2 V, IC = 0
DC current transfer ratio
h
FE*
1
100
—
500
V
CE = 12 V, IC = 2 mA
Base to emitter voltage
V
BE
—
0.75
V
CE = 12 V, IC = 2 mA
Collector to emitter saturation
voltage
V
CE(sat)
—
0.2
V
I
C = 10 mA, IB = 1 mA
Gain bandwidth product
f
T
—
200
—
MHz
V
CE = 12 V, IC = 2 mA
Collector output capacitance
Cob
—
3.5
pF
V
CB = 10 V, IE = 0, f = 1 MHz
Noise figure
NF
—
1.0
5.0
dB
V
CE = 6 V, IC = 0.1 mA,
R
g = 1 k, f = 1 kHz
Note:
1. The 2SC3413 is grouped by h
FE as follows.
BC
D
100 to 200
160 to 320
250 to 500
See characteristic curves of 2SC458(LG).
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC3413-D | SMALL SIGNAL TRANSISTOR |
| 2SC3413 | SMALL SIGNAL TRANSISTOR |
| 2SC3420-Y | 5 A, 20 V, NPN, Si, POWER TRANSISTOR |
| 2SC3421-Y | 1 A, 120 V, NPN, Si, POWER TRANSISTOR |
| 2SC3421 | 1 A, 120 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3415STPN | 功能描述:两极晶体管 - BJT TRANS GP BJT NPN 300V 0.1A 3PIN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC3415STPP | 功能描述:两极晶体管 - BJT TRANS GP BJT NPN 300V 0.1A 3PIN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC3417 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTORTO-126 300V .1A 1.2W ECB |
| 2SC3419 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR (86I |
| 2SC3419-O(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
发布紧急采购，3分钟左右您将得到回复。