参数资料
型号: 2SC3421
元件分类: 功率晶体管
英文描述: 1 A, 120 V, NPN, Si, POWER TRANSISTOR
文件页数: 1/4页
文件大小: 133K
代理商: 2SC3421
2SC3421
2006-11-09
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3421
Audio Frequency Power Amplifier Applications
Complementary to 2SA1358
Suitable for driver of 60 to 80 watts audio amplifier
High breakdown voltage
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
120
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1
A
Base current
IB
100
mA
Ta = 25°C
1.5
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
相关PDF资料
PDF描述
2SC3421Y 1 A, 120 V, NPN, Si, POWER TRANSISTOR
2SC3423-Y 0.05 A, 150 V, NPN, Si, POWER TRANSISTOR
2SC3423-Y 0.05 A, 150 V, NPN, Si, POWER TRANSISTOR
2SC3423 0.05 A, 150 V, NPN, Si, POWER TRANSISTOR
2SC3437RTE85L 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
相关代理商/技术参数
参数描述
2SC3421-O(Q) 制造商:Toshiba America Electronic Components 功能描述:
2SC3421-Y(Q) 制造商:Toshiba 功能描述:NPN Bulk 制造商:Toshiba America Electronic Components 功能描述:Tr.,NPN,120V/1A,hfe=120to240,TO-126IS 制造商:Toshiba 功能描述:Trans GP BJT NPN 120V 1A 3-Pin TO-126IS
2SC3422-Y(Q) 制造商:Toshiba 功能描述:NPN Bulk
2SC3423-O(Q) 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 150V 0.05A 3-Pin TO-126IS
2SC3423-Y(Q) 功能描述:两极晶体管 - BJT Pb-FF TO126 PLS PLN-N,ACTIVE, RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2