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参数资料
| 型号： | 2SC3421 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1 A, 120 V, NPN, Si, POWER TRANSISTOR |
| 文件页数： | 2/4页 |
| 文件大小： | 133K |
| 代理商： | 2SC3421 |
2SC3421
2006-11-09
2
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 120 V, IE = 0
―
100
nA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
―
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
120
―
V
DC current gain
hFE
(Note)
VCE = 5 V, IC = 100 mA
80
―
240
Collector-emitter saturation voltage
VCE (sat)
IC = 500 mA, IB = 50 mA
―
0.30
1.0
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 500 mA
―
0.78
1.0
V
Transition frequency
fT
VCE = 5 V, IC = 100 mA
―
120
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
15
―
pF
Note: hFE classification O: 80 to 160, Y: 120 to 240
Marking
C3421
Part No. (or abbreviation code)
Characteristics indicator
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC3421Y | 1 A, 120 V, NPN, Si, POWER TRANSISTOR |
| 2SC3423-Y | 0.05 A, 150 V, NPN, Si, POWER TRANSISTOR |
| 2SC3423-Y | 0.05 A, 150 V, NPN, Si, POWER TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3421-O(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC3421-Y(Q) | 制造商:Toshiba 功能描述:NPN Bulk 制造商:Toshiba America Electronic Components 功能描述:Tr.,NPN,120V/1A,hfe=120to240,TO-126IS 制造商:Toshiba 功能描述:Trans GP BJT NPN 120V 1A 3-Pin TO-126IS |
| 2SC3422-Y(Q) | 制造商:Toshiba 功能描述:NPN Bulk |
| 2SC3423-O(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 150V 0.05A 3-Pin TO-126IS |
| 2SC3423-Y(Q) | 功能描述:两极晶体管 - BJT Pb-FF TO126 PLS PLN-N,ACTIVE, RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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