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参数资料
| 型号： | 2SC3413C |
| 英文描述： | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | SPAKVAR |
| 中文描述： | 晶体管|晶体管|叩| 30V的五（巴西）总裁| 100mA的一（c）| SPAKVAR |
| 文件页数： | 5/5页 |
| 文件大小： | 23K |
| 代理商： | 2SC3413C |
2SC3413
5
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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Europe
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: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Copyright
Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
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Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
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Tsim Sha Tsui, Kowloon,
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Tel : <852>-(2)-735-9218
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Electronic Components Group.
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Tel: <44> (1628) 585000
Fax: <44> (1628) 585160
Hitachi Europe GmbH
Electronic Components Group
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β
e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Semiconductor
(America) Inc.
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Colophon 2.0
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| 2SC3415STPN | 功能描述:两极晶体管 - BJT TRANS GP BJT NPN 300V 0.1A 3PIN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC3415STPP | 功能描述:两极晶体管 - BJT TRANS GP BJT NPN 300V 0.1A 3PIN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC3417 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTORTO-126 300V .1A 1.2W ECB |
| 2SC3419 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR (86I |
| 2SC3419-O(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
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