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参数资料
| 型号： | 2SC3583 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 12/21页 |
| 文件大小： | 534K |
| 代理商： | 2SC3583 |
PART NUMBER
NE68133
NE68135
NE68139/39R
EIAJ1 REGISTERED NUMBER
2SC3583
2SC3604
2SC4094
PACKAGE OUTLINE
33
35
39
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP MAX
MIN
TYP MAX
MIN
TYP MAX
fT
Gain Bandwidth Product at VCE = 8 V, IC = 20 mA
GHz
9.0
VCE = 3 V, IC = 7 mA
GHz
NF
Noise Figure at VCE = 8 V, IC = 7 mA, f = 1 GHz
dB
1.2
2
1.2
2
f = 2 GHz
dB
1.6
2.3
GNF
Associated Gain at VCE = 8 V, IC = 7 mA,
f = 1 GHz
dB
13
13.5
f = 2 GHz
dB
12
|S21E|2
Insertion Power Gain at VCE = 8 V, IC = 20 mA,
f = 1 GHz
dB
11
12.5
15
f = 2 GHz
dB
7
9
11
8.5
hFE
Forward Current Gain2 at VCE= 8 V, IC = 20 mA
VCE = 3 V, IC = 7 mA
50
100
250
50
100
250
50
100
200
ICBO
Collector Cutoff Current at VCB = 10 V, IE = 0 mA
A
1.0
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0 mA
A
1.0
CRE3
Feedback Capacitance at
VCB = 10 V, IE = 0 mA, f = 1 MHz
pF
0.35
0.9
0.2
0.7
0.25
0.8
RTH (J-A)
Thermal Resistance (Junction to Ambient)
°C/W
625
590
625
PT
Total Power Dissipation
mW
200
295
200
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
PART NUMBER
NE68100
NE68118
NE68119
NE68130
EIAJ1 REGISTERED NUMBER
2SC5012
2SC5007
2SC4227
PACKAGE OUTLINE
00 (CHIP)
18
19
30
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS MIN TYP MAX
MIN
TYP MAX
MIN
TYP MAX
MIN
TYP MAX
fT
Gain Bandwidth Product at
VCE = 8 V, IC = 20 mA
GHz
9.0
VCE = 3 V, IC = 7 mA
GHz
7.0
NF
Noise Figure at VCE = 8 V, IC = 7 mA,
f = 1 GHz
dB
1.2
2.5
1.4
1.5
f = 2 GHz
dB
1.6
2.3
1.8
1.6
GNF
Associated Gain at VCE = 8 V, IC = 7 mA,
f = 1 GHz
dB
14
13.5
f = 2 GHz
dB
12
10
9
|S21E|2
Insertion Power Gain at
VCE = 8 V, IC = 20 mA, f = 1 GHz
dB
17
13
15
14
13
f = 2 GHz
dB
9
11
9
8
7.5
hFE
Forward Current Gain2 at
VCE = 8 V, IC = 20 mA
50
100
250
50
100
250
VCE = 3 V, IC = 7 mA
80
160
40
240
ICBO
Collector Cutoff Current at
VCB = 10 V, IE = 0 mA
A
1.0
IEBO
Emitter Cutoff Current at
VEB = 1 V, IC = 0 mA
A
1.0
CRE3
Feedback Capacitance at
VCB = 3 V, IE = 0 mA, f = 1 MHz
pF
0.45
0.9
0.45
0.9
VCB = 10 V, IE = 0 mA, f = 1 MHz
pF
0.2
0.7
0.25
0.8
RTH (J-A)
Thermal Resistance (Junction to Ambient)
°C/W
80
833
1000
833
PT
Total Power Dissipation
mW
600
150
100
150
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed (PW
≤ 350 ms, duty cycle ≤ 2 %).
3. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
NE681 SERIES
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3583-A | 功能描述:RF TRANSISTOR NPN SOT-23 制造商:cel 系列:- 包装:剪带 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿（最大值）:10V 频率 - 跃迁:9GHz 噪声系数（dB，不同 f 时的典型值）:1.2dB @ 1GHz 增益:15dB 功率 - 最大值:200mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:50 @ 20mA，8V 电流 - 集电极（Ic）（最大值）:65mA 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商器件封装:SOT-23-3 标准包装:1 |
| 2SC3583T1B | 制造商:NEC 功能描述:* 制造商:NEC 功能描述:Transistor 3k per reel |
| 2SC3583-T1B | 制造商:NEC 功能描述:Transistor 3k per reel 制造商:NEC Electronics Corporation 功能描述: |
| 2SC3583-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans GP BJT NPN 10V 0.065A 3-Pin SC-59 T/R |
| 2SC3583-T1B-A(R) | 制造商:Renesas Electronics 功能描述:NPN |
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