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参数资料
| 型号： | 2SC3834L-TA3-T |
| 厂商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 120 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | LEAD FREE, TO-220, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 193K |
| 代理商： | 2SC3834L-TA3-T |
2SC3834
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R203-026.C
ABSOLUTE MAXIMUM RATING (Ta=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
200
V
Collector-emitter voltage
VCEO
120
V
Emitter-Base Voltage
VEBO
8
V
Collector Current (Pulse)
IC
7
A
Base Current
IB
3
A
Collector Dissipation (TC=25°C)
PC
50
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector-Emitter Breakdown Voltage
BVCEO
IC= 50mA
120
V
Collector Cutoff Current
ICBO
VCB=200V, IE=0A
100
μA
Emitter Cutoff Current
IEBO
VEB=8V, IC=0A
100
μA
DC Current Gain (Note)
hFE
VCE=4V, IC=3A
70
220
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=3A, IB=0.3mA
0.5
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC=3A, IB=0.3mA
1.2
V
Current Gain Bandwidth Product
fT
IE=-0.5mA, VCE=12V, f=100MHz
30
MHz
Output Capacitance
Cob
VCB=10 V, IE=0A, f=1MHz
110
pF
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