参数资料
型号: 2SC3836
元件分类: 小信号晶体管
英文描述: SMALL SIGNAL TRANSISTOR
封装: SPAK-3
文件页数: 2/6页
文件大小: 27K
代理商: 2SC3836
2SC3836
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
60
V
Collector to emitter voltage
V
CEO
50
V
Emitter to base voltage
V
EBO
15
V
Collector current
I
C
300
mA
Collector power dissipation
P
C
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
60
——V
I
C = 10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
50
——V
I
C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BE)EBO
15
——V
I
E = 10 A, IC = 0
Collector cutoff current
I
CBO
——
1
AV
CB = 50 V, IE = 0
Base to emitter voltage
V
BE
0.75
V
CE = 6 V, IC = 1 mA
DC current transfer ratio
h
FE1
800
2000
V
CE = 6 V, IC = 100 mA
(pulse test)
h
FE2
500
V
CE = 6 V, IC = 1 mA
Collector to emitter saturation
voltage
V
CE(sat)
0.3
V
I
C = 300 mA, IB = 30 mA
(pulse test)
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相关代理商/技术参数
参数描述
2SC3837KT146 制造商:ROHM Semiconductor 功能描述:
2SC3837KT146N 功能描述:两极晶体管 - BJT NPN 20V 50MA RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC3837KT146N/P 制造商:ROHM Semiconductor 功能描述:Transistor, NPN, RF, 18V, 50mA, SMT3, 2
2SC3837KT146P 功能描述:两极晶体管 - BJT NPN 20V 50MA RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC3838KT146 制造商:ROHM Semiconductor 功能描述: