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参数资料
| 型号： | 2SC3838KT146N |
| 元件分类： | 小信号晶体管 |
| 英文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | SC-59, SMT3, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 147K |
| 代理商： | 2SC3838KT146N |
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c
2010 ROHM Co., Ltd. All rights reserved.
2010.01 - Rev.D
High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz)
2SC5662 / 2SC4726 /2SC4083 / 2SC3838K
Features
Dimensions (Unit : mm)
1) High transition frequency. (Typ. fT= 3.2GHz)
2) Small rbb’
Cc and high gain. (Typ. 4ps)
3) Small NF.
Packaging specifications and hFE
Package
hFE
Marking
Code
Basic ordering unit
(pieces)
Type
2SC4726
EMT3
NP
AD
TL
3000
2SC5662
2SC4083
UMT3
NP
1D
T106
3000
VMT3
NP
AD
T2L
8000
2SC3838K
SMT3
NP
AD
T146
3000
Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
20
11
3
50
0.2
150
55 to +150
Unit
V
mA
0.15
2SC4083, 2SC3838K
2SC5662, 2SC4726
W
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
fT
Cob
rbb'
Cc
NF
20
11
3
1.4
3.2
0.8
0.5
1.5
V
μA
GHz
pF
IC = 10
μA
IC
= 1mA
IE
= 10
μA
VCB
= 10V
VEB
= 2V
VCE(sat)
0.5
V
IC/IB
= 10mA/5mA
VCE/IC
= 10V/5mA
VCE
= 10V , IE =
10mA , f = 500MHz
2SC5662, 2SC4726,
2SC4083, 2SC3838K
VCB
= 10V , IE = 0A , f = 1MHz
VCB
= 10V , IC = 10mA , f = 31.8MHz
VCE
= 6V , IC = 2mA , f = 500MHz , Rg = 50
Ω
412
ps
3.5
dB
56
180
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current
transfer ratio
Transition frequency
Output capacitance
Collector-emitter saturation voltage
Collector-base time constant
Noise factor
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
0.2
0.15
0.1Min.
0.9
0.7
1.25
2.1
0.3
(3)
0.65
(2)
2.0
1.3
(1)
0.65
(2)
(1)
2.8
1.6
0.4
(3)
2.9
1.9
0.95
0.8
0.15
0.3Min.
1.1
(2) Base
(3) Collector
(1) Emitter
(3) Collector
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
Each lead has same dimensions
2SC4726
2SC4083
2SC3838K
ROHM : EMT3
EIAJ : SC-75A
ROHM : UMT3
EIAJ : SC-70
ROHM : SMT3
EIAJ : SC-59
2SC5662
ROHM : VMT3
(1) Base
(3) Collector
(2) Emitter
(3)
0.32
0.8
1.2
0.13
0.5
0.22
0.4 0.4
1.2
0.8
0.2
(2)
(1)
1.6
0.7
0.15
0.1Min.
0.55
0.2
1.6
1.0
0.3
0.8
(2)
0.5
(3)
0.2
(1)
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| 2SC5662T2LN | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4083T106P | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3838KT146N/P | 制造商:ROHM Semiconductor 功能描述:Transistor, NPN, RF, 11V, 50mA, SMT3, 2 |
| 2SC3838KT146P | 功能描述:两极晶体管 - BJT NPN 11V 50MA RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC3839K | 制造商:ROHM Semiconductor 功能描述:HIGH FREQ NPN SM BIPOLAR TRANSISTOR SOT-23 - free partial T/R at 500. |
| 2SC383TM(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC3840-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN Power Transistor, 600V, 1.0A, TO-126 制造商:Renesas 功能描述:Trans GP BJT NPN 600V 1A 3-Pin TO-126 |
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