- 您现在的位置：买卖IC网 > PDF目录30560 > 2SC3838KT146N S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SC3838KT146N |
| 元件分类： | 小信号晶体管 |
| 英文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | SC-59, SMT3, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 147K |
| 代理商： | 2SC3838KT146N |
2/2
www.rohm.com
○
c
2010 ROHM Co., Ltd. All rights reserved.
2010.01 - Rev.D
Data Sheet
2SC5662 / 2SC4726 /2SC4083 / 2SC3838K
Electric characteristics curves
0.1 0.2
0.5 1
2
5
10
20
50
DC
CURRENT
TRANSFER
RATIO
:
h
FE
COLLECTOR CURRENT : IC (mA)
10
20
50
100
200
500
Fig.1 DC current gain vs. collector current
Ta
=25
°C
VCE
=10V
Fig.2 Collector-emitter saturation voltage
vs. collector current
0.1 0.2
0.5
1
2
5
10
20
50
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(mV
)
COLLECTOR CURRENT : IC (mA)
10
20
50
100
200
500
Ta
=25
°C
IC
/IB
=10
IC
/IB
=2
0.1 0.2
0.5 1 2
5 10 20
50
TRANSITIONFREQUENCY
:
f
T
(GHz)
EMITTER CURRENT : IE (mA)
0.1
0.2
0.5
1.0
2.0
5.0
Fig.3 Gain bandwidth product
vs. emitter current
Ta
=25
°C
VCE
=10V
0.1 0.2
0.5
1
2
5
10
20
50
OUTPUT
CAPACITANCE
:
C
ob
(pF)
FEEDBACK
CAPACITANCE
:
C
re
(pF)
COLLECTOR TO BASE VOLTAGE : VCB (V)
0.1
0.2
0.5
1.0
2.0
5.0
Fig.4 Capacitance vs. reverse bias voltage
Ta
=25
°C
f
=1MHz
IE
=0A
Cob
Cre
0.1 0.2
0.5
1
2
5
10
20
50
COLLECTOR
TO
BASE
TIME
CONSTANT
:
C
c
rbb'
(p
s)
COLLECTOR CURRENT : IC (mA)
1.0
2.0
5.0
10
20
50
Fig.5 Collector to base time constance
vs. collector current
Ta
=25
°C
f
=31.8MHz
VCE
=10V
0.1 0.2
0.5
1
2
5
10
20
50
NOISE
FIGURE
:
NF
(dB)
COLLECTOR CURRENT : IC (mA)
0
10
20
Fig.6 Noisfactor vs.
collector current characteristics
Ta
=25
°C
f
=500MHz
VCE
=6V
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC5662T2LN | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4083T106P | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4726TLN | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4083T106/N | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4731 | 4 A, 100 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3838KT146N/P | 制造商:ROHM Semiconductor 功能描述:Transistor, NPN, RF, 11V, 50mA, SMT3, 2 |
| 2SC3838KT146P | 功能描述:两极晶体管 - BJT NPN 11V 50MA RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC3839K | 制造商:ROHM Semiconductor 功能描述:HIGH FREQ NPN SM BIPOLAR TRANSISTOR SOT-23 - free partial T/R at 500. |
| 2SC383TM(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC3840-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN Power Transistor, 600V, 1.0A, TO-126 制造商:Renesas 功能描述:Trans GP BJT NPN 600V 1A 3-Pin TO-126 |
发布紧急采购，3分钟左右您将得到回复。