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参数资料
| 型号： | 2SC4059P |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 15 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-247 |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 94K |
| 代理商： | 2SC4059P |
Features
With TO-247 package
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
450
V
VCBO
Collector-Base Voltage
600
V
VEBO
Emitter-Base Voltage
7.0
V
IC
Collector Current
15
A
PC
Collector power dissipation
130
W
TJ
Junction Temperature
150
OC
TSTG
Storage Temperature
-55 to +150
OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
VCBO
Collector-base breakdown voltage
(IC=1mAdc; IE=0)
600
---
Vdc
V(SUS)CEO
Collector-Emitter Breakdown Voltage
(IC=20mAdc, IB=0)
450
---
Vdc
VEBO
Emitter-base breakdown voltages
(IC=1mA; IB=0)
7.0
---
Vdc
ICBO
Collector-Base Cutoff Current
(VCB=600Vdc,IE=0)
---
0.1
mAdc
IEBO
Emitter-Base Cutoff Current
(VEB=7.0Vdc, IC=0)
---
0.1
mAdc
ICEO
Collector-emitter Cutoff Current
(VCE=450V; IB=0)
---
0.1
mAdc
ON CHARACTERISTICS
hFE
Forward Current Transfer ratio
(IC=7.5Adc, VCE=5.0Vdc)
10
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=7.5Adc, IB=1.5Adc)
---
1.0
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=7.5Adc,IB=1.5Adc)
---
1.5
Vdc
TO-247
2SC4059
NPN Silicon
Power Transistors
www.mccsemi.com
omponents
20736 Marilla
Street Chatsworth
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$% !"#
MCC
Revision: 1
2003/04/21
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
---
.866
---
22.00
B
---
.669
---
17.00
C
.185
.209
4.70
5.30
D
.039
.055
1.00
1.40
E
.067
.091
1.70
2.30
F
---
.098
---
2.50
G
.207
.222
5.25
5.65
H
.106
.130
2.70
3.30
J
.018
.033
0.45
0.85
K
.748
---
19.00
---
L
.583
.598
14.80
15.20
M
.067
.106
1.70
2.70
P
---
.177
---
4.50
Q
.122
.138
3.10
3.50
R
.197
.236
5.00
6.00
U
.461
.500
11.70
12.70
V
---
.138
---
3.50
PIN 1.
BASE
PIN 2.
COLLECTOR
PIN 3.
EMITTER
H
A
K
B
E
C
R
J
P
U L
1
2
3
Q
G
V
D
F
M
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC4059-BP | 15 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-247 |
| 2SC4081-TP | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC4081-C-TP | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC4081SP | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC4081Q | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC4060 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| 2SC4060-4100 | 功能描述:两极晶体管 - BJT RO 627-2SC4060-7100 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC4060-7100 | 功能描述:两极晶体管 - BJT V=450 IC=20 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC4060-7112 | 功能描述:两极晶体管 - BJT V=450 IC=20 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC4061K | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:Chroma amplifier transistor |
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