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| 型号： | 2SC4132T100 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | MPT3, SC-62, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 117K |
| 代理商： | 2SC4132T100 |
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c
2009 ROHM Co., Ltd. All rights reserved.
2009.02 - Rev.D
Power Transistor (120V, 2A)
2SC4132
Features
Dimensions (Unit : mm)
1) High breakdown voltage. (BVCEO = 120V)
2) Low collector output capacitance.
(Typ. 20pF at VCB = 10V)
3) High transition frequency. (fT = 80MHz)
4) Complements the 2SB1236.
Packaging specifications and hFE
Package
Code
Taping
Basic ordering unit (pieces)
2SC4132
PQR
T100
1000
Type
hFE
120 to 270
hFE
Item
Q
82 to 180
P
180 to 390
R
hFE
values are classified as follows:
Absolute maximum ratings (Ta = 25
°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
120
5
2
3
0.5
2
150
55 to +150
Unit
V
A
W
1
2
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
1 Single pulse Pw = 10ms
2 When mounted on a 40 × 40 × 0.7mm ceramic board.
Electrical characteristics (Ta = 25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
fT
Cob
120
5
80
20
1
0.4
V
A
V
MHz
pF
IC = 50
A
IC = 1mA
IE = 50
A
VCB = 100V
VEB = 4V
IC/IB = 1A/0.1A
hFE
82
390
VCE/IC = 5V/0.1A
VCE = 5V , IE =
0.1A , f = 30MHz
VCB = 10V , IE = 0A , f = 1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Transition frequency
Output capacitance
DC current
transfer ratio
Measured using pulse current.
ROHM : MPT3
EIAJ : SC-62
2SC4132
(1) Base
(2) Collector
(3) Emitter
1.5
0.4
1.6
0.5
3.0
0.4
1.5
(3)
(2)
(1)
4.5
0.5
4.0
2.5
1.0
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC4132T100/Q | 制造商:ROHM Semiconductor 功能描述:2000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC4132T100P | 功能描述:两极晶体管 - BJT DVR NPN 120V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC4132T100Q | 功能描述:两极晶体管 - BJT NPN 120V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC4132T100R | 功能描述:两极晶体管 - BJT NPN 120V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC4133 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTORSPA 50V .1A .3W ECB |
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