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参数资料
| 型号： | 2SC4132T100 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | MPT3, SC-62, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 117K |
| 代理商： | 2SC4132T100 |
2SC4132
Data Sheet
2/2
www.rohm.com
○
c
2009 ROHM Co., Ltd. All rights reserved.
2009.02 - Rev.D
Electrical characteristics curves
COLLECTOR
CURRENT
:
I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.1 Ground emitter output characteristics
0
0.2
0.4
0.6
0.8
1.0
1
2
3
4
5
0
Ta
=25°C
IB
=0mA
1mA
2mA
3mA
5mA
6mA
7mA
8mA
9mA
10mA
4mA
COLLECTOR
CURRENT
:
I
C
(A)
BASE TO EMITTER VOLTAGE : VBE
(V)
Fig.2 Ground emitter propagation characteristics
0
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Ta
=
100
°C
25
°C
25
°C
VCE
=5V
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC
(A)
Fig.3 DC current gain vs. collector current ( )
1
2
5
10
20
50
100
200
500
1000
0.01 0.02
0.05
0.1 0.2
0.5
12
5
10
Ta
=25°C
5V
VCE
=10V
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC
(A)
Fig.4 DC current gain vs. collector current (
)
1
2
5
10
20
50
100
200
500
1000
0.01 0.02
0.05
0.1 0.2
0.5
12
5
10
Ta
=100°C
25
°C
25°C
VCE
=5V
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V)
COLLECTOR CURRENT : IC
(A)
Fig.5 Collector-emitter saturation voltage
vs. collector current
0.01
0.01 0.02
0.05
0.1
0.2
0.5
1
2
5
10
0.02
0.05
0.1
0.2
0.5
1
2
5
10
Ta
=25°C
IC/IB
=5V
10
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V)
BASE
SATURATION
VOLTAGE
:
V
BE(sat)
(V)
COLLECTOR CURRENT : IC
(A)
Fig.6 Collector-emitter saturation
Base-emitter saturation vs. collector current
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
25
10
Ta
=100°C
Ta
= 25°C
25°C
25
°C
25
°C
100
°C
VCE(sat)
VBE(sat)
IC/IB
=10
TRANSITION
FREQUENCY
:
f
T
(MHz)
EMITTER CURRENT : IE
(mA)
Fig.7 Gain bandwidth product vs. emitter current
1
2
5
10
20
50
100
200
500
1000
1 2
5 10 20
50 100 200
500 1000
VCE
=5V
Ta
=25°C
COLLECTOR
OUTPUT
CAPACITANCE
:
Cob
(pF)
COLLECTOR TO BASE VOLTAGE : VCB
(V)
Fig.8 Collector output capacitance
vs. collector-base voltage
1
2
5
10
20
50
100
200
500
1000
0.1 0.2
0.5
1
2
5
10 20
50 100
Ta
=25°C
f=1MHz
IE
=0A
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
COLLECTOR
CURRENT
:
I
C
(A)
0.2
0.1
0.5 12
5 10 20
50 100
500
200
5
500m
2
200m
1
100m
20m
10m
5m
2m
1m
50m
Ta
=25°C
Single
nonrepetitive
pulse
Pw
=
10ms
Pw=100ms
IC Max(PULSE
)
Fig.9 Safe operating area
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC4132T100/Q | 制造商:ROHM Semiconductor 功能描述:2000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC4132T100P | 功能描述:两极晶体管 - BJT DVR NPN 120V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC4132T100Q | 功能描述:两极晶体管 - BJT NPN 120V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC4132T100R | 功能描述:两极晶体管 - BJT NPN 120V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC4133 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTORSPA 50V .1A .3W ECB |
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