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参数资料
| 型号： | 2SC44124 |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 50 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/3页 |
| 文件大小： | 24K |
| 代理商： | 2SC44124 |
2SC4412
No.3019-1/3
Features
High breakdown voltage(VCEO≥300V).
Small reverse transfer capacitance and excellent high
frequency characteristic(Cre : 1.0pF typ).
Excellent DC current gain ratio(hFE ratio : 0.95 typ).
Adoption of FBET process.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
300
V
Collector-to-Emitter Voltage
VCEO
300
V
Emitter-to-Base Voltage
VEBO
5V
Collector Current
IC
50
mA
Collector Current (Pulse)
ICP
100
mA
Collector Dissipation
PC
250
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=200V, IE=0
0.1
A
Emitter Cutoff Current
IEBO
VCE=4V, IC=0
0.1
A
DC Current Gain
hFE1VCE=6V, IC=0.1mA
100*
320*
hFE2VCE=6V, IC=1mA
100
Marking : QT
Continued on next page.
* : The 2SC4412 is classsified by 0.1mA hFE as follows.
Rank
4
5
hFE
100 to 200
160 to 320
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN3019B
2SC4412
TV Camera Deflection
High-Voltage Driver Applications
Package Dimensions
unit : mm
2018B
[2SC4412]
11502 TS IM / D1598HA (KT) / 5189MO, TS
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
0.4
0.95 0.95
1.9
2.9
0.5
1.5
2.5
0.5
0.16
0 to 0.1
0.8
1.1
2
3
1
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PDF描述 |
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| 2SC4412 | 50 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SC44125 | 50 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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| 2SC4412 | 50 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SC4412-5 | 50 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC4413-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS NPN 50V 0.1A SOT323 |
| 2SC4418LF608 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC4420 | 功能描述:TRANS NPN 800VCEO 3A TOP-3F RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SC444 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR60V .5A .8W |
| 2SC4440 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTOR TO-2 600V 7A 30W ECB |
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