参数资料
型号: 2SC4505T100
元件分类: 小信号晶体管
英文描述: 100 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: MPT3, 3 PIN
文件页数: 1/4页
文件大小: 64K
代理商: 2SC4505T100
2SC4505
Transistors
Rev.D
1/3
Power Transistor (400V, 0.1A)
2SC4505
Features
1) High breakdown voltage. (BVCEO = 400V)
2) Low saturation voltage,
typically VCE (sat)= 0.05V at IC / IB = 10mA / 1mA.
3) High switching speed, typically tf = 1.7
s at Ic =100mA.
4) Complements the 2SC4505 and the 2SA1759.
Packaging specifications and hFE
Type
2SC4505
MPT3
PQ
1000
T100
CE
Denotes hFE
Package
hFE
Basic
ordering unit (pieces)
Code
Marking
Dimensions (Unit : mm)
MPT3
(1)Base
(2)Collector
(3)Emitter
1.5
0.4
1.6
0.5
3.0
0.4
1.5
(3)
(2)
(1)
4.5
0.5
4.0
2.5
1.0
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
400
7
0.1
0.5
150
55 to +150
Unit
V
A (DC)
0.2
A (Pulse)
W
1
2
2
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1 Single pulse, Pw=20ms, Duty=1/2
2 When mounted on a 40×40×0.7mm ceramic board.
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
400
7
82
0.05
20
7
10
0.5
270
V
A
V
MHz
pF
IC
=50A
IC
=1mA
IE
=50A
VCB
=400V
VEB
=6V
IC/IB
=10mA/1mA
VBE(sat)
1.5
V
IC/IB
=10mA/1mA
VCE
=10V , IC=10mA
VCE
=10V , IE=10mA , f=10MHz
VCB
=10V , IE=0A , f=1MHz
ton
1
sIC=100mA RL=1.5k
tstg
5.5
sIB1=IB2=10mA
tf
1.7
sVCC~150V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Base-emitter saturation voltage
Turn-on time
Storage time
Fall time
相关PDF资料
PDF描述
2SC4505T200P 100 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC4505T100/NQ 0.1 A, 400 V, NPN, Si, POWER TRANSISTOR
2SC4505T200N 100 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC4505T100/PQ Si, SMALL SIGNAL TRANSISTOR
2SC4505T100PQ 100 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SC4505T100P 功能描述:两极晶体管 - BJT NPN 400V 100MA RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC4505T100Q 功能描述:两极晶体管 - BJT NPN 400V 100MA RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC4511 制造商:Sanken Electric Co Ltd 功能描述:Box 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN 80V 6A TO220F
2SC4517 制造商:Distributed By MCM 功能描述:SUB ONLY SANKEN TRANSISTOR FM20 900V 3A 30W BCE
2SC4518 制造商:Sanken Electric Co Ltd 功能描述:Trans GP BJT NPN 550V 5A 3-Pin (3+Tab) TO-220F Bulk 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN 550V 5A TO220F