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参数资料
| 型号： | 2SC4505T100 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | MPT3, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 64K |
| 代理商： | 2SC4505T100 |
2SC4505
Transistors
Rev.D
2/3
Electrical characteristics (Ta=25
°C)
02
4
6
8
10
40
80
120
160
200
COLLECTOR
CURRENT
:
I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
0
Fig.1 Ground emitter output characteristics
Ta
=25
°C
IB
=0mA
0.5mA
1.0mA
1.5mA
2.0mA
2.5mA
3.0mA
3.5mA
COLLECTOR
CURRENT
:
I
C
(A)
BASE TO EMITTER VOLTAGE : VBE (V)
1.4 1.6
0.4 0.6
0.8
1.0
1.2
0.2
0
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
1
0.5
Ta=100
°C
25
°C
25
°C
VCE
=3V
Fig.2 Ground emitter propagation characterisitics
Fig.3 DC current gain vs. collector current (
Ι )
0.001 0.002
0.005
0.01 0.02
0.05
0.1 0.2
0.5
1
DC
CURRENT
GAIN
:
h
EF
COLLECTOR CURRENT : IC (A)
1
2
5
10
20
50
100
200
500
1000
VCE
=10V
5V
Ta
=25
°C
Fig.4 DC current gain vs. collector current (
ΙΙ )
DC
CURRENT
GAIN
:
h
EF
COLLECTOR CURRENT : IC (A)
1
2
5
10
20
50
100
200
500
1000
0.001 0.002
0.005
0.01 0.02
0.05
0.1 0.2
0.5
1
VCE
=10V
25
°C
Ta
=100
°C
25
°C
Fig.5 Collector-emitter saturation voltage
vs. collector current
0.001 0.002 0.005
0.01 0.02
0.05
0.1
0.2
0.5
1
0.02
0.05
0.1
0.2
0.5
1
2
5
10
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V)
COLLECTOR CURRENT : IC (A)
0.01
IC/IB
=20
10
5
Ta
=25
°C
Fig.6 Collector-emitter saturation voltage
Collector-base saturation voltage vs. collector current
0.001 0.002 0.005
0.01 0.02
0.05
0.1 0.2
0.5
1
COLLECTOR
SATURATION
VOLTAGE
:V
CE(sat)
(V)
BASE
SATURATION
VOLTAGE
:V
BE(sat)
(V)
COLLECTOR CURRENT : IC (A)
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
VCE(sat)
100
°C
25
°C
25
°C
25
°C
Ta
=
25
°C
Ta
=100
°C
IC
/IB
=10
VBE(sat)
Fig.7 Gain bandwidth product vs. emitter current
0.005 0.01 0.02
0.05 0.1 0.2
0.5 1 2
2
10
20
50
100
200
500
5
1000
TRANSITION
FREQUENCY
:
f
T
(MHz)
EMITTER CURRENT : IE (A)
1
Ta
=25
°C
VCE
=10V
Fig.8 Collector output capacitance
vs. collector-base voltage
0.1 0.2
0.5
1
2
5
10
20
50
100
2
10
20
50
100
200
500
5
1000
COLLECTOR
OUTPUT
CAPACITANCE
:
C
ob
(pF)
COLLECTOR TO BASE VOLTAGE : VCB (V)
1
Ta
=25
°C
f
=1MHz
IE
=0A
Fig.9 Safe operating area
0.1
1
10
100
1000
COLLECTOR
CURRENT
:
I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
0.001
0.01
0.1
1
Ic Max. (Pulse
)
DC
Pw=100m
Pw=10m
Pw=1m
Ta
=25
°C
Single
nonrepetitive pulse
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