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参数资料
| 型号： | 2SC458 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件页数： | 3/6页 |
| 文件大小： | 26K |
| 代理商： | 2SC458 |
2SC458, 2SC2308
3
Electrical Characteristics (Ta = 25°C)
2SC458
2SC2308
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
30
—
55
—
V
I
C = 10 A, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
30
—
50
—
V
I
C = 1 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
5
—
—5
——
V
I
E = 10 A, IC = 0
Collector cutoff current
I
CBO
—
0.5
—
0.5
AV
CB =18 V, IE = 0
Emitter cutoff current
I
EBO
—
0.5
—
0.5
AV
EB = 2 V, IC = 0
DC current transfer ratio h
FE*
1
100
—
500
100
—
320
V
CE = 12 V, IC = 2 mA
Collector to emitter
saturation voltage
V
CE(sat)
—
0.2
—
0.2
V
I
C = 10 mA, IB = 1 mA
Base to emitter voltage
V
BE
—
0.67
0.75
—
0.67
0.75
V
CE = 12 V, IC = 2 mA
Gain bandwidth product f
T
—
230
—
230
—
MHz
V
CE = 12 V, IC = 2 mA
Collector output
capacitance
Cob
—
1.8
3.5
—
1.8
3.5
pF
V
CB = 10 V, IE = 0,
f = 1 MHz
Noise figure
NF
—
4
10
—
4
10
dB
V
CE = 6 V, IC = 0.1 mA,
f = 1 kHz, R
g = 500
Small signal input
impedance
h
ie
—
16.5
—
16.5
—
k
V
CE = 5V, IC = 0.1mA,
f = 270 Hz
Small signal voltage
feedback ratio
h
re
—
70
——70
—
× 10–6
Small signal current
trancefer ratio
h
fe
—
130
—
130
—
Small signal output
admittance
h
oe
—
11.0
—
11.0
—
S
Note:
1. The 2SC458 and 2SC2308 are grouped by h
FE as follows.
BC
D
2SC458
100 to 200
160 to 320
250 to 500
2SC2308
100 to 200
160 to 320
—
See characteristic curves of 2SC458 (LG) and 2SC2310 except for the followings.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC458-B | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC458-C | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC2308 | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC2308B | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC458K | SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC4580-7100 | 功能描述:两极晶体管 - BJT VCEO=450 IC=8 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC4580-7112 | 功能描述:两极晶体管 - BJT VCEO=450 IC=8 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC4581 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC4581-7100 | 功能描述:两极晶体管 - BJT V=450 IC=10 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC4581-7112 | 功能描述:两极晶体管 - BJT V=450 IC=10 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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